[XLS] · Web viewExamples to explain Power Temperature Cycling Wire Bond Shear Physical Dimensions Die Shear Change of mold compound/encapsulation/sealing material Vibration Variable

AEC-Q100 & 101

ID Type of change

ANY

SEM-AN-01 Any change with impact on agreed upon contractual agreements

SEM-AN-02

Headings DATA SHEET

SEM-DS-01

SEM-DS-02 Correction of data sheet / errata

SEM-DS-03 Specification of additional parameters

Headings DESIGN

SEM-DE-01

For integrated circuits or discrete semiconductors select below:

Assessment of impact on Supply Chain regarding following aspects - contractual agreements - technical interface of processability/manufacturability of customer - form, fit, function, quality performance, reliability

Any change with impact on processability/manufacturability at customer, which is not covered in the matrix below.

Change of data sheet parameters/electrical specification (min./max./typ. values) and/or AC/DC specification

Design changes in active elements. 1)

Mark changes

with an "x"

SEM-DE-02

SEM-DE-03

SEM-DE-04 Firmware modification

Headings PROCESS - WAFER PRODUCTION

SEM-PW-01 New / change of wafer substrate material

SEM-PW-02 New wafer diameter

SEM-PW-03 New final wafer thickness

SEM-PW-04 Change of electrically active doping / implantation element

SEM-PW-05 Change of gate material / dielectrics

SEM-PW-06

SEM-PW-07

SEM-PW-08 New / change of passivation or die coating (without bare die)

SEM-PW-09

Design changes in routing . 2)

Die shrink 3)

New / change of backside operation (grinding / metallization)

New / change of metallization / vias / contacts

Change in process technology (e.g. process changes like lithography, etch, oxide deposition, diffusion, die back surface preparation/backgrind, ...)

SEM-PW-10 Process integrity: tuning within specification

SEM-PW-11 Change of wafer supplier.

SEM-PW-12

SEM-PW-13

SEM-PW-14 Lithography

SEM-PW-15 Oxide / Interlayer Dielectric

Headings BARE DIE

SEM-BD-01 New final wafer thickness

SEM-BD-02 New / change of frontside metallization

SEM-BD-03 New / change of backside metallization

SEM-BD-04 Change of wafer setup or number of possible good dies on wafer.

SEM-BD-05

SEM-BD-06 Die scribe or separation

Change of specified wafer process sequence (deletion and/or additional process step)

Move of all or part of wafer fab to a different location/site/subcontractor

Change of optical appearance of wafer edge region (like polyimid coverage or edge exclusion)

SEM-BD-07 Die Preparation / Clean

SEM-BD-08 New / change of passivation or die coating

Headings PROCESS - ASSEMBLY

SEM-PA-01 Change in critical dimensions of package

SEM-PA-02 Change of leadframe base material

SEM-PA-03 Change in leadframe dimensions

SEM-PA-04 Change of lead frame finishing material / area (internal)

SEM-PA-05 Change of lead and heat slug plating material/plating thickness (external)

SEM-PA-06 Bump Material / Metal System (internal)

SEM-PA-07 Die attach

SEM-PA-08 Change of wire bonding

SEM-PA-09 Substrate / Interposer

SEM-PA-10 Die Overcoat / Underfill

SEM-PA-11

SEM-PA-12

SEM-PA-13 Change of product marking

SEM-PA-14

SEM-PA-15 Process integrity: tuning within specification

SEM-PA-16 Change of direct material supplier

SEM-PA-17

SEM-PA-18 Move of all or part of assembly to a different location/site/subcontractor.

SEM-PA-19 Die scribe or separation

Change of mold compound / encapsulation material

Change of hermetic sealing

Change in process technology(e.g. sawing, die attach, bonding, molding, plating, trim and form, lead frame preparation, …)

Change of specified assembly process sequence (deletion and/or additional process step)

SEM-PA-20 Die Preparation / Clean

SEM-PA-21 Molding / Encapsulation process

Headings PACKING/SHIPPING

SEM-PS-01 Packing/shipping specification change

SEM-PS-02 Dry pack requirements change

SEM-PS-03 Change of carrier (tray, reel)

SEM-PS-04 Change of labelling

Headings EQUIPMENT

SEM-EQ-01

SEM-EQ-02

SEM-EQ-03 Change in final test equipment type that uses a different technology

TEST FLOW

SEM-TF-01

Headings Q-GATE

SEM-QG-01

Tests, which should be considered for the appropriate process change.

Tests, which should be considered for the appropriate process change after selection of condition table.

Production from a new equipment/tool which uses a different basic technology or which due to its unique form or function can be expected to influence the integrity of the final product

Production from a new equipment/tool which uses the same basic technology (replacement equipment or extension of existing equipment pool) without change of process.

Move of all or part of electrical wafer test and/or final test to a different location/site/subcontractor

Change of the test coverage/testing process flow used by the supplier to ensure data sheet compliance (e.g. elimination/addition of electrical measurement/test flow block; relaxation/enhancement of monitoring procedure or sampling)

Suppliers performed tests (mark with an 'X' for done or 'G' for generic)

Reason for exception of tests:

Worked on:

PCN number

No Yes

P P Not relevant for technical evaluation.

P P

P P

I P

I P

P P

Remainingrisks onSupplyChain?

Understanding of semiconductors experts

Any change which is not covered in the matrix below, but risk assessment at customer is recommended.

Update of data sheet because of technical change of the product.No technical change of the product, only correction in description (wording, drawing, …).(I): In case of editorial changes. (P): In case of impact on product integrity.

Description of a new not previously covered parameter. No technical change of the product.(I): Definition of new parameter which was not documented before.(P): Not known as single change. Only in combination with other changes.

Any device relevant changes in design / layout of elements with effect on data sheet1) Not included: Modification to adjust product parameter within specified process window and design rules.

Comparison

Rev. 3 vs. 2

P P

P P

I P

P P New wafer material.

P P

P P Change in final wafer thickness.

P P

P P

P P

P P

P P

-- P

Any change of wiring between elements in chip design / layout with effect on data sheet.2) Not included: Modification to adjust product parameter within specified design rules.

Shrink of active area.3) Not included: sawing street/kerf/scribe line

Integrated software by design or memory as defined by supplier.(I): Firmware modification or update without effect of functional performance at the customer (bug fix).(P): Firmware modification or update with effect of functional performance at the customer.

Change of wafer diameter resulting in equipment and process changes.

Change in electrically active doping / implantation element resulting in a new technology.

Change of gate material and / or gate dielectric material.Change of bottom layer of die (between die and leadframe). Change in process, material, or dimensions necessary.Alternative see SEM-PW-09

Change in metallization of bondpads, material, layer thickness specifically for chip frontside and internal layers.

Change of top layer on die (between mold compound and die).

(--): If the change in process technology does not influence the integrity of the final product.(P): If the change in process technology can influence the integrity of the final product.

-- P

-- P

-- P

P P

-- P

-- P

P P Change in final wafer thickness.

P P

P P

I P

I P

I P

Variation within process specification(--): If tuning within process specification does not influence the integrity of the final product.(P): If remaining risk on product specification is anticipated.

(--): If no remaining risk in supply chain exist(P): If the change of wafer supplier can influence the integrity of the final product.

Any change which is not covered by another type of change. Risk is to be assessed.(--): No Risk for Supply chain.(P): Risk for Supply chain (influence on product integrity)

Wafer fab transition with additional changes (described above).

Change in process technique for lithographic process and material(--): If the change in process technology does not influence the integrity of the final product.(P): If the change in process technology can influence the integrity of the final product.

Change in process technique for oxide / interlayer dielectric process(--): If the change in process technology does not influence the integrity of the final product.(P): If the change in process technology can influence the integrity of the final product.

Change in bondpads, material, pad pitch, surface changes, layer thicknessChange of bottom layer of die. Change in process, material, or dimensions.

Needed information for pick & place machine.(I): amount of possible good dies on wafer(P): influence on wafer setup and wafer mapping

Selection of dies in wafer edge region which have full electrical functionality. (I): in case of wafer edge is affected only(P): in case of single die is affected

Needed information for sawing and pick & place machine.(I): If the change in sawing process does not influence the integrity of the final product.(P): in case if product is delivered on wafer

-- P

P P Change of top layer on die.

P P Change in dimensions of existing package.

P P New leadframe material in new composition.

P P

P P

P P

P P Stack die or die to substrate (flip chip)

P P

P P

P P Change of BGA substrate

-- P

Change in process technique for die preparation / cleaning(--): If the change in process does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

Change in leadframe dimensions which has impact to the specified electrical parameter acc. data sheet or specification (e.g. heat sink, pin dimensions, die paddle size, ...)Not included: Variation within specification.

Change of surface material of die attach pad and second bond area (e.g. influence in adhesion to mold compound, wedge bond reliability)

Change in material and / or process resulting in a new technology (e.g. pure tin).

Change of die attach material and / or process resulting in a new technology (e.g. soft solder, epoxy, etc.)

Material, diameter, change in bonding diagram and / or change in process resulting in a new technology.

Supporting layers for complex packages like flip chip and / or change in process resulting in a new technology.(--): If change does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

P P

P P

I P

-- P

-- P

-- P

-- P

P P Assembly transfer or relocation

-- P

Change of mold compound / encapsulation material.

Affected areas are material and process of hermetic (e.g. ceramic ) packages, capped die and sealed devices (e.g. pressure sensors)

Change of marking on device and / or change in process resulting in a new technology..(I): If change does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

(--): If the change in process technology does not influence the integrity of the final product.(P): If the change in process technology can influence the integrity of the final product.

Variation within process specification(--): If tuning within process specification does not influence the integrity of the final product.(P): If impact on product specification is anticipated.

Change of suppliers for direct materials which are used in assembly process (BOM).(--): If change does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

(--): no influence in final product integrity or specified sequence(P): influence in final product integrity or specified sequence

Separation process from single wafer to dies. (--): If the change in process does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

-- P

-- P

P P Packing/shipping specification change.

P P

P P Change of carrier (tray, reel)

I P

P P

-- P

P P

P P

-- P


Change in process technique for die preparation / cleaning(--): If the change in process does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

Change in process technique for molding / encapsulation.(--): If the change in process does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

Change of dry pack requirements (e.g. change of MSL)

Change of labelling also on reel.(I): Change of material label without impact on barcode.(P): Changes of material label information which affects data processing at customer.

Change in process technique which is not already covered above.

PCN required for dedicated equipment for sensitive component production.(--): If change does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

Change of tester platform (Only in case of bare die: final test means wafer test.)

Tester transfer or relocation. Check impact on SEM-AN-01

e.g. test flow block, reduction from three temperature measurements to two temperature measurements, change in burn in / run in process.(--): If change does not influence the integrity of the final product.(P): If impact on product integrity is anticipated.

-- Not required.I Information Note required.P PCN required.

on:

Examples to explain

*

B

A

A

A

A

Eval

uatio

n le

vel

A /

B /

C

A: A

pplic

atio

n le

vel

B: B

oard

leve

l C

: Com

pone

nt le

vel

* :

Not

rele

vant

for

qual

ifica

tion

mat

rix

e.g. recommendations for pull-up/pull-down or NC pins, MSL

(I): e.g. correction of typo(P): e.g. data sheet correction because of new information about component behavior.

(I): e.g. adding new tested parameter.

e.g. change of ESD structuree.g. add / remove a transistor in layout

Comparison

Rev. 3 vs. 2

H7

Examples are limiterd to three!

C

Typical shrink of die. A

A

C

C

e.g. change in final chip/die thickness C

A

A

e.g. change from Cr/NiV/Au to Cr/NiV/Ag C

C

e.g. addition of polyimide C

A

e.g. mask changes in metal fix for corrective action (based on external 8D report)

(I): e.g. addition of Firmware opportunities(P): e.g. bug fix with impact on functional performance

e.g. different wafer material to currently released material (like change from EPI material into non-EPI material)

e.g. change from AlSiCu to AlCue.g. change in over pad metallization

(--): e.g. change from wet to dry etching, e. g. change from horizontal to vertical oven for oxidation(P): e.g. change of layer thickness

C

C

C

e.g. dual source / fab strategy A

C

A

Change in final chip/die thickness A

B

e.g. change from Cr/NiV/Au to Cr/NiV/Ag A

B

B

B

(--): e.g. process control

(--): e.g. change of wafer supplier with same material composition.e.g. same material composition and does not influence electrical behavior.(P): e.g. new supplier with impact on substrate material and / or electrical behavior.

(--): e.g. change of cleaning process in wafer production(P): e.g. additional sinker implantation after standard implantation (to protect circuit against interference impulses).

(--): e.g. exchange of defect mask(P): e.g. change from E-beam process to X-ray processe.g. change from contact into projection mode

e.g. change from AlSiCu to AlCue.g. change in over pad metalization

(I): e.g. change from 350 to 240 good dies on wafer(P): e.g. information change for pick & place machine.

(I): e.g. appearance of wafer edge (rounded instead of square)(P): e.g. polyimide as new coating on die

(I): e.g. if product is delivered as known good die (in tape and reel)(P): e.g. information change for pick & place machine.e.g. information change for sawing machine.

B

B

B

B

e.g. change in lead frame geometry B

C

B

C

C

C

e.g. changes in routing B

C

(--): e.g. change of cleaning time.(P): e.g. change in cleaning procedure after change of sawing equipment.

e.g. addition of polyimidee.g. change of polyimide thickness

e.g. changes in package dimensions (further development).e.g. change from alloy42 to coppere.g. change between two different copper alloys

e.g. change from Ag flash to NiP protection layere.g. change from Ag spot to Au spote.g. increase of silver plating areae.g. change in heat slug stacke.g. change from Sn into Ni/Pd/Aue.g. change of layer thickness e.g. change to Pb-free materiale.g. change of copper pillars

e.g. change from Au to Cu materiale.g. change from 25µm to 23µm diametere.g. change from single to double bonde.g. change from stich bond to stich on ball bond.

(--): e.g. change of dispensing speed(P): e.g. change of underfill material

B

e.g. change of sealing material for RoHS B

B

B

C

C

C

C

C

e.g. change to green mold compounde.g. change of filler particles

(I): e.g. change of appearance (additional marking)(P): e.g. change from inked marking to laser markinge.g. marking of pin 1

(P): e.g. change from ball bond to stitch

(--): e.g. process control

(--): e.g. change of wire material supplier.(P): e.g. change to new mold compound suppliere.g. additional leadframe supplier with specific leadframe manufacturing technology

(--): e.g. additional cleaning step e.g. deletion of optical inspection(P): e.g. change lead finishing pre trim & form to post trim & form

e.g. dual source / fab strategy

(--): e.g. change of kerf width(P): e.g. change from sawing to laser cut

C

C

*

*

B

B

A

C

e.g. change tester equipment from LTX to Teradyne C

Dual source strategy C

C

(--): e.g. change of cleaning time.

(--): e.g. tuning within process specification

(I) e.g. additional information (RoHS stamp)(P) e.g. change of defined nomenclature for data processing

Change from single wafer to batch process (e.g. over pad metallization)e.g. dambar cutting (mechanical to laser cutting)

(--): e.g. extension of existing equipment pool for(P): e.g. extension of dedicated equipment in case basic technology still need to be proven

(--): e.g. test implemented without customer requirement(P): e.g. reduction from three temperature measurements to two temperature measurementse.g. change in burn in / run in process.

2016-12-19

Device evaluation

Further applicable conditions

AEC

- Q

100

Aut

ocla

ve o

r Unb

iase

d H

AS

T

Tem

pera

ture

Cyc

ling

Pow

er T

empe

ratu

re C

yclin

g

THB

AC

TC PTC

A2 A3 A4 A5

- - - - - - -

- - - - - - -

- - - - - - -

- - - - - - -

- - - - - - -

- ● - - ● ● M

Line

eva

luat

ion

(can

be

eval

uate

d by

dat

a or

aud

it/on

site

che

ck)

MATERIAL PERFORMANCE TEST RESULTS (on the basis of AEC-Q100 Rev. H)includes integrated circuits (e.g. ASICs, µ-Controler, memories, voltage regulators, smart power devices, logic devices, analog devices,... )

Che

ck o

f spe

cific

atio

n (fo

r raw

mat

eria

l onl

y)

Tem

pera

ture

Hum

idity

Bia

s or

bi

ased

HA

ST

Please check if data sheet is affected (SEM-DS-01).

Q6

Test required only on devices with maximum rated power ≥ 1 watt or DTJ = 40ºC or devices designed to drive inductive loads

- ● - - - A M

- ● - ● ● - M

- - - - - - -

In case of Cu wire product please consider AEC-Q006. - - ● - - - -

● ● - - - E M

- ● - - - E M

- ● - - - - M

- ● - - - ● M

- ● - - - ● M

In case of Cu wire product please consider AEC-Q006. - ● - ● ● ● M

- ● - ● ● ● M

● ● - - - - -

A: Impact on EMC behavior cannot be evaluated / excluded on component level.A: If impact on electrical function is not excluded on component level.Please check if data sheet is affected (SEM-DS-01).

Please check if change in process technology (SEM-PW-09) is also affected.In case of Cu wire product please consider AEC-Q006.

Impact on changes in SEM-PW-09 and/or SEM-EQ-01.

A: If thermal conductivity is affected (like MOSFET; IGBT, BGA package, stacked dies, …)A: If impact on EMC or ESD behavior cannot be evaluated / excluded on component level.In case of Cu wire product please consider AEC-Q006.

A: If thermal conductivity is affected (like MOSFET; IGBT, BGA package, stacked dies, …)A: If impact on EMC or ESD behavior cannot be evaluated / excluded on component level.

Change of intrinsic mechanical stress might influence electrical function.In case of Cu wire product please consider AEC-Q006.

Please also check changes described under EQUIPMENT.Please check if change is described by specific type of change in this matrix.

- - - - - - -

- - ● - - - -

- - - - - - -

In case of Cu wire product please consider AEC-Q006. ● ● - ● ● ● M

- ● - ● - ● M

- ● - - - ● M

In case of Cu wire product please consider AEC-Q006. - ● - - - E M

In case of Cu wire product please consider AEC-Q006. - ● - ● ● ● M

- ● - - - ● M

- - - - - - -

- - - - - - -

- ● - ● ● ● M

Please check if DATA SHEET is affected. Please check if SEM-PW-09 is affected.

Not on component, tested on test structure (typical for IC).Interaction on component level for discrete components expected.In case of SOI substrate HF properties have to be qualified. Please check if SEM-PW-01 and SEM-DS-01 is affected.

Please also check changes described under EQUIPMENT.

Please also check changes described under EQUIPMENT.

Please check if SEM-BD-04 is affected.

- ● - ● ● - M

In case of Cu wire product please consider AEC-Q006. - ● - - - - -

- ● - ● ● ● M

In case of Cu wire product please consider AEC-Q006. - ● ● - ● ● M

- ● - - ● ● M

In case of Cu wire product please consider AEC-Q006. - ● ● ● ● ● M

- ● ● ● ● ● M

- ● ● ● ● ● M

- ● ● ● ● ● M

● ● ● ● ● ● Q

- ● ● ● ● ● M

- ● ● ● ● ● M

Please check if SEM-BD-06 is affected.

ESD investigations are only necessary if internal ground and power supply connection of leadframe is affected.A: If impact on EMC behavior cannot be evaluated / excluded on component level.In case of Cu wire product please consider AEC-Q006.

A: If impact on EMC behavior cannot be evaluated / excluded on component level (if die attach has impact on electrical conductivity).

In case of Cu wire product please consider AEC-Q006.

A: In case of bond diagram change and EMC cannot be evaluated on component level.

Please also check changes described under SEM-EQ-01.

In case of Cu wire bonding please consider AEC-Q006.

A: Impact on EMC behavior cannot be evaluated / excluded on component level.A: If impact on electrical function is not excluded on component level.


- ● ● ● ● ● M

- ● ● - ● ● -

- ● - - - - -

- ● - - - - -

- - - - - - -

Please check if material is changed! - - ● - - - -

- - - - - - -

● ● - ● ● ● M

- ● - ● ● ● M

A: impact on thermo-mechanical stress caused by mismatch of mold compound, interconnecting technology and carrier is evident anticipated (specific for Power Devices). A: in case of high frequency signals (> 3GHz) it should be assessed if possible changes in permeability of mold compound could affect signal behavior (e.g. digital signal processor).


A: impact on EMC behavior cannot be evaluated / excluded on component level (if encapsulation / sealing has impact on electrical conductivity).

Please also check changes described under SEM-EQ-01.Please check if change is described by specific type of change in this matrix.

A or B: impact on other type of changes described under PROCESS ASSEMBLY and SEM-EQ-01.


- ● - ● ● - M

- ● - ● ● ● M

- - - - - - -

- - - - - - -

- - - - - - -

- - - - - - -

● - - - - - -

- - - - - - -

- - - - - - -

● - - - - - -

● - - - - - -

Device evaluation

Hig

h Te

mpe

ratu

re S

tora

ge L

ife

Hig

h Te

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ratu

re O

pera

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Life

Ear

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Wire

Bon

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Wire

Bon

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Sol

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Phy

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ensi

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Sol

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Lead

Inte

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Car

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Stre

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igra

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HTS

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ELFR

EDR

WB

S

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P

SD PD SBS

LI EM TDD

B

HC

I

NB

TI

SM

A6 B1 B2 B3 C1 C2 C3 C4 C5 C6 D1 D2 D3 D4 D5

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- ● ● D,J - - - - - - D D D D D


NV

M E

ndur

ance

, Dat

a R

eten

tion,

an

d O

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Tim

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epen

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Die

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ric

Bre

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Neg

ativ

e B

ias

Tem

pera

ture

In

stab

ility

Comparison

Rev. 3 vs. 2

- - - - - - - - - - - - - - -

- ● ● DJ - - - - - - ● ● ● ● ●

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- ● ● - E E - - - - - - - ● -

- ● ● - E E - - - - - - - ● -

- ● G - - - - - - - - - - ● -

- ● - D,J - - - - - - - - - ● -

- ● - - - - - - - - - - - - -

- ● - - ● ● - - - - ● - - - ●

- ● G,N D,J ● ● - - - - - ● ● ● ●

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- ● ● J ● ● - - - - ● ● ● ● ●

- ● G - ● ● - - - - - - - ● -

- ● G D,J - ● - - - - - ● ● ● ●

- ● ● - E E - - - - - - - ● -

- ● - - - - - ● - - - - - - -

- ● - - - - ● ● - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- ● - - ● ● - - - - - - - - -

- - - - - - - - - - - - - - -

● ● ● - ● ● ● ● T ● - - - - -

● - - - - ● ● ● - ● - - - - -

- - - - - - ● ● - ● ● - - - -

● - - - - C ● - - ● - - - - -

● - - - - C ● - - ● - - - - -

● ● - - - - - ● ● - - - - - -

- ● - - - - - - - - ● - - - -

● - - - ● ● - - - - ● - - - -

● ● - - ● ● - - T - ● - - - -

● ● - - - - - - - - - - - - -

● ● ● - - - ● ● - ● - - - - -

● - - - - - - ● - ● ● - - - -

- - - - - - B - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- ● ● - ● ● ● ● T ● - - - - -

- - - - - - - - - - - - - - -

- ● - - ● ● - - - - - - - - -

● ● - - - - ● ● - ● - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - - - - - - - - - - - - - -

- - * - - - - - - - - - - - -

CONDITIONS YES NOA Only for peripheral routingB For symbol rework, new cure time, tempC If bond to leadfingerD Design rule changeE Thickness onlyF MEMS element onlyG Only from non-100% burned-in partsGe Generic Data availableH Hermetic onlyJ EPROM or EEPROMK Passivation onlyL For Pb-free devices onlyM For devices requiring PTCN Passivation and gate oxideQ Wire diameter decreaseT Only for Solder Ball SMD* For "burn in" changes IOL or ELFR recommended

=> Please mark 'YES' or 'NO' with a small 'x'

A letter or "●" indicates that performance of that stress test should be considered for the appropriate process change (acc. AEC-Q100).

S110

PTC required only on devices with maximum rated power ≥ 1 watt or DTJ = 40ºC or devices designed to drive inductive loads.

Device evaluationLa

tch

up

Ele

ctric

al D

istri

butio

n

Cha

ract

eris

atio

n

Ele

ctro

mag

netic

Com

patib

ility

Sho

rt C

ircui

t Cha

ract

eriz

atio

n

Sof

t Err

or R

ate

Lead

free

Mec

hani

cal S

erie

s

Pac

kage

Dro

p

Lid

Torq

ue

Die

She

ar

Inte

rnal

Wat

er V

apor

HB

M

CD

M

LU ED CH

AR

EMC

SC SER

LF MEC

H

DR

OP

LT DS

IWV

E2 E3 E4 E5 E7 E9 E10 E11 E12 G1 -G 4 G5 G6 G7 G8

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

● ● ● ● ● ● ● ● - - F - - -


Hum

an B

ody

Mod

el

Cha

rged

Dev

ice

Mod

el E

SDCompariso

n

Rev. 3 vs. 2

● ● ● ● ● ● ● - - - - - - -

● ● ● ● ● ● ● ● - - - - - -

- - - - - - - - - - - - - -

- - - ● ● - - - - - - - - -

E E E ● - - - - - - - - - -

E E E ● - - - - - - - - - -

● ● ● ● ● - - - - - - - - -

● ● ● ● ● - - - - - - - - -

M M ● - ● - - - - H - - H -

- - - ● ● - ● - - - - - - -

● ● ● ● ● - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - ● - - - - - - - - - -

- - - - - - - - - - - - - -

● ● ● ● - - - - - H - - H -

- - - ● - - - - - - - - - -

● ● ● ● ● - - - - - - - - -

E E E ● - - - - - - - - - -

- - - ● ● - ● - - - - - - -

- - - ● ● - ● - - - - - ● -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - H -

- - - - - - - - - - - - - -

● ● - ● - - ● - L H - - H H

- - - - - - ● - L H - - H -

- - - - - - ● - L H - - - -

- - - - - - - - L H - - H -

- - - - - - - - L H - - H -

- - - - - - - ● L - - - - -

- - - ● - - ● - L H - - H H

- - - M - - ● - - H - - - -

- - - - - ● - - L H - - H H

- - - - - - - ● - - - - - H

- - - - - - - ● L - - - - -

- - - - - - - - - ● - ● - ●

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - ● - - - - L H - - H H

- - - - - - - - - - - - - -

- - - - - - - - - - - - H -

- - - - - - - - L - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - - - - - - - - - - - -

- - - ● - - - - - - - - - -

- - - - - - - - - - - - - -

- - - ● - - - - - - - - - -

- - - ● - - - - - - - - - -

- - - ● - - - - - - - - - -

Device evaluation

AEC

- Q

101

Ext

erna

l Vis

ual

Par

amet

ric V

erifi

catio

n

Hig

h Te

mp.

Gat

e B

ias

Tem

pera

ture

Cyc

le

EV PV HTG

B

TC

3 4 5abc 6 7 7ab 8/alt

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - ● ● ● 3 - -

MATERIAL PERFORMANCE TEST RESULTS (on the basis of AEC-Q101 Rev. D1)includes e.g. small signal diodes (bipolar - and Schottky diodes), small signal transistors, MOSFETS, IGBTs, power diodes, …

[Note: Affected devices are with the die molded in a plastic mold compound with metal leads for board attachment.]

Che

ck o

f spe

cific

atio

n (fo

r raw

mat

eria

l onl

y)

Hig

h Te

mpe

ratu

re R

ever

se B

ias

AC

blo

ckin

g vo

ltage

Hig

h Te

mpe

ratu

re F

orw

ard

Bia

sS

tead

y S

tate

Ope

ratio

nal

Tem

pera

ture

Cyc

ling

Hot

Tes

tTC

Del

amin

atio

n Te

stW

ire B

ond

Inte

grity

Unb

iase

d H

ighl

y A

ccel

erat

ed

Stre

ss T

est

Aut

ocla

ve

HTR

BA

CB

VH

TFB

SSO

P

TC H

otTC

D

elam

WB

I

UH

AST

A

C

● - - ● ● ● 3 - -

● - - ● ● - ● - -

- - - - - - - - -

- ● - ● ● - - - -

● - - ● ● ● - - -

● - - ● ● - ● ● -

● - - ● 5,6,0 ● - - 6

● - - ● ● ● ● - -

● - - ● - - ● - Z

● - - ● 8 - ● ● ●

● - - ● ● ● ● - ●

● - - - - - - - -

AU30

For respective change see AEC-Q101 (Rev. D1) page 20: - Epitaxic Growth - Etch

- - - - - - - - -

● ● - ● ● - - - -

- - - - - - - - -

● - - ● ● ● ● ● ●

● - - ● 4 4 - - -

● - - ● - ● - - 6

- - - - - - -

- - - - - - -

- - - - - - -

- - - - - - -

- - - - - - -

- - - - - - -

AU38

Not part of AEC-Q101 Rev.D1

AU39


AU40


AU41


AU42


AU43


- - - - - - -

- - - - - - -

● - ● ● ● ● ● ● ●

● ● ● - - - ● ● ●

● - - - - - ● - -

● ● D - - - C - C

- ● ● - - - - - -

- ● - - - - - - -

● ● - ● - - ● - ●

● ● - ● - - ● ● -

- ● - - - - - - -

- - - - ● ● ● - ●

AU44


AU45


● ● ● ● ● ● ● ● ●

● ● H - - - H - H

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- ● - - - - - - -

- - - ● - - - - -

● - ● ● ● ● ● ● ●

● - - ● - - ● - -

● - - ● - - ● - ●

● - ● - ● ● ● ● ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - ● - - - - -

- - - ● - - - - -

● - - ● - - - - -

● - - ● - - - - -

Device evaluationE

SD

Cha

ract

eriz

atio

n

Des

truct

. Phy

. Ana

lysi

s

Phy

sica

l Dim

ensi

ons

Term

inal

Stre

ngth

Res

ista

nce

to S

olve

nts

Con

stan

t Acc

eler

atio

n

Vib

ratio

n V

aria

ble

Freq

uenc

y

ESD

DPA

PD TS RTS

CA

VVF

9/alt/a 10/alt 11 12 13 14 15 16 17

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- ● E 3 - - - - -


[Note: Affected devices are with the die molded in a plastic mold compound with metal leads for board attachment.]

Hig

hly

Acc

eler

ated

Stre

ss T

est

Hig

h H

umid

ity H

igh

Tem

p.

Rev

erse

Bia

sH

igh

Tem

pera

ture

Hig

h H

umid

ity

Bia

s

Inte

rmitt

ent O

pera

tiona

l Life

Pow

er a

nd T

empe

ratu

re C

ycle

HA

STH

3 TR

BH

THH

B

IOL

PTC

Comparison

Rev. 3 vs. 2

- ● E 3 - - - - -

- ● E ● - - - - -

- - - - - - - - -

● ● - - - - - - -

- - - - - - - - -

- ● - ● - - - - -

6 - ● 6 - - - - -

- - E ● - - - - -

● ● - - - - - - -

● ● E ● - - - - -

● ● ● ● - - - - -

- - - - - - - - -

- - - - - - - - -

● ● - - - - - - -

- - - - - - - - -

● ● E ● - - - - -

6, 7 - - - - - - - -

6 ● E 6 - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● ● ● ● ● ● B H H

● ● - - ● ● - - -

● ● - - ● - - - -

C - - - D - D - -

- - - - ● - ● - -

- - - - - - - - -

● ● - - - - - - -

● ● - ● - - - - -

- - - - - - - - -

● ● - ● - - - - -

● ● - ● ● - B - -

H - - H - H - H H

- - - - - - B - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● ● - ● ● ● ● - -

- ● - - - - - - -

● - - - - - - - -

● ● - ● ● B - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- * - - - - - - -

CONDITIONSA Acoustic MicroscopyB If not laser etchedC Only for Leadframe Plating changeD Only for Lead Finish changeE If ApplicableF Finite Element AnalysisG Glass Transition TemperatureGe Generic Data availableH Hermetic device onlyI Infant Mortality RateM Power MOS/IGBT devices onlyP CV Plot (MOS only)R Spreading Resistance ProfileS Steady State Mortality RateX X-RayZ For backside operation changes1 If bond pads are affected2 Verify #2 (package) post3 Only for changes at the periphery4 Only for oxide etches or etches prior to oxidation5 For source or channel region changes6 For field termination changes7 For passivation changes8 For contact changes9 For epitaxial changes0 Required for Schottky barrier changes.* For "burn in" changes IOL or ELFR recommended

'=> Please mark 'YES' or 'NO' with a small 'x'


Device evaluation

Mec

hani

cal S

hock

Her

met

icity

Res

ist.

to S

olde

r Hea

t

Ther

mal

Res

ista

nce

Wire

Bon

d S

treng

th

Wire

Bon

d S

hear

Die

She

ar

Unc

lam

p.In

duct

.Sw

itch

MS

HER

RSH

SD TR WB

S

BS

DS

UIS

18 19 20 21 22 23 24 25 26

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - M


[Note: Affected devices are with the die molded in a plastic mold compound with metal leads for board attachment.]S

olde

rabi

lity

/ AE

C-Q

005

- - - - - - - - M

- - ● - ● - - ● M

- - - - - - - - -

- - - - ● - - - 9, M

- - - - - - - - -

- - X - ● ● ● - -

- - - - - - - - M

- - - - - - - - M

- - ● - ● - - ● -

- - ● - - ● ● - -

- - - - - ● - - -

- - - - - - - - -

- - - - - - - - -

- - - - ● - - - 9, M

- - - - - - - - -

- - - - ● ● ● ● M

- - - - - 1 - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

H H ● ● ● - - ● -

- H ● ● ● 2 - ● -

- H - - ● - - ● -

- H - - D C 2,C - C

- H - ● - - - - -

- - - - - - - - -

- H ● - ● - - ● -

- - ● - - ● ● - -

- - - - - - - - -

- H - - - ● - - -

- H ● ● ● - - - -

H H H - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

H H ● ● - ● ● ● -

- - - - - - - - -

- - - - - ● - ● -

- H ● ● - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

YES NO


Device evaluation

Die

lect

ric In

tegr

ity

Lead

Fre

e

Not

es /

Rem

arks

DI

SCR

LF

27 28 29

- - - - - -

- - - - - -

- - - - - -

- - - - - -

- - - - - -

- ● - - - ●

additional to AEC-Q10x

Sho

rt C

ircui

t Rel

iabi

lity

Cha

ract

eriz

atio

n

Whi

sker

test

(IEC

600

68-T

2-82

, JE

DE

C

JES

D20

1)

Par

amet

er-A

naly

sis:

C

ompa

rison

of e

lect

rical

di

strib

utio

n

- ● - - - ●

- ● - F - ●

- - - - - -

- - - R - ●

- - - - - ●

- - - F - ●

- - - P, R - ●

● ● - P - ●

- - - - - ●

- ● - - - ●

- - - - - ●

- - - - - ●

- - - - - ●

- - - R - ●

- - - - - -

● - - - ●

- - - P - ●

● - - - - ●

- - - - - ●

- - - - - -

- - - - - ●

- - - - - -

- - - - - ●

- - - - - -

A,I,PR,S

- - - - - -

- - - - - ●

● ● - - - -

- ● - A,F,X Ge -

- ● - - - -

- - - - - -

- - - - - -

- - - - - -

- ● - A,X - ●

- ● - - - ●

- - - - - -

- - - - - -

● - - A,F,G - -

- - - - - -

- - - - - -

- - - - - -

- - - - - -

- - - - - -

- - - - - -

- - - A,G,I,S,X Ge ●

- - - - - -

- - - X - -

- - - A,G - -

- - - - - -

- - - - - -

- - - - - -

- - - - - -

- - - - - ●

- - - - - -

- - - - - ●

- - - - - ●

- - - - - ●

Remarks

Qualification effort acc. AEC-Q100: see diffusion/doping

AEQ-Q100: Applicable to all smart power devices.

Qualification effort depends on type of change.

AEC-Q100: "For broad changes that involve multiple attributes (e.g., site, materials, processes), refer to section A1.3 of this appendix and section 2.3 of Q100, which allows for the selection of worst-case test vehicles to cover all the possible permutations."

Qualification for IC & µ-Controller difficult on product level. Characterisation on wafer level only on test structure.AEC-Q100: "For broad changes that involve multiple attributes (e.g., site, materials, processes), refer to section A1.3 of this appendix and section 2.3 ofQ100, which allows for the selection of worst-case test vehicles to cover all the possible permutations."


For wire bond strengh test: Pre- & Post-process change comparison to evaluateprocess change robustness (AEC-Q101).

Parameter Analysis: Strictly required only for Power devices.In general: Site audit for material change with impact on bondprocess (e.g. from Au to Cu) recommended.AEC-Q100: "For broad changes that involve multiple attributes (e.g., site, materials, processes), refer to section A1.3 of this appendix and section 2.3 of Q100, which allows for the selection of worst-case test vehicles to cover all the possible permutations."

See change of material.

Qualification depends on specific change.

Whisker tests have to be done on monitoring basis!


Affected process change is to check.

Gage R&R / delta correlation


Parameter Analysis: Delta correlation

* For "burn in" changes ELFR recommended

ID-Number

NETWORKS & RESISTORS Headings

NETWORKS & RESISTORS





Selection of component

PAS-RES-AN-01

PAS-RES-AN-02

PAS-RES-DS-01























PAS-RES-DS-02

PAS-RES-DS-03

PAS-RES-MA-01

PAS-RES-MA-02

PAS-RES-MA-03

PAS-RES-MA-04

PAS-RES-MA-05

PAS-RES-MA-06

PAS-RES-DE-01

PAS-RES-DE-02

PAS-RES-PR-01

PAS-RES-PR-02

PAS-RES-PR-03

PAS-RES-PR-04

PAS-RES-PR-05

PAS-RES-PR-06

PAS-RES-PR-07

PAS-RES-PR-08

















INDUCTORS Headings

INDUCTORS Headings

INDUCTORS

PAS-RES-PN-01

PAS-RES-PN-02

PAS-RES-PN-03

PAS-RES-PV-01

PAS-RES-PV-02

PAS-RES-PV-03

PAS-RES-EQ-01

PAS-RES-EQ-02

PAS-RES-EQ-03

PAS-RES-PF-01

PAS-RES-PF-02

PAS-RES-QG-01

PAS-IND-AN-01

INDUCTORS

INDUCTORS Headings

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS Headings

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS PAS-IND-MA-10

PAS-IND-AN-02

PAS-IND-DS-01

PAS-IND-DS-02

PAS-IND-DS-03

PAS-IND-MA-01

PAS-IND-MA-02

PAS-IND-MA-03

PAS-IND-MA-04

PAS-IND-MA-05

PAS-IND-MA-06

PAS-IND-MA-07

PAS-IND-MA-08

PAS-IND-MA-09

INDUCTORS Headings

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

PAS-IND-DE-07

INDUCTORS Headings

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS PAS-IND-PR-05

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS PAS-IND-PR-10

INDUCTORS Headings

INDUCTORS

PAS-IND-DE-01

PAS-IND-DE-02

PAS-IND-DE-03

PAS-IND-DE-04

PAS-IND-DE-05

PAS-IND-DE-06

PAS-IND-PR-01

PAS-IND-PR-02

PAS-IND-PR-03

PAS-IND-PR-04

PAS-IND-PR-06

PAS-IND-PR-07

PAS-IND-PR-08

PAS-IND-PR-09

PAS-IND-PN-01

INDUCTORS

INDUCTORS

INDUCTORS Headings

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS Headings

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS Headings

INDUCTORS

INDUCTORS

INDUCTORS

INDUCTORS Headings

INDUCTORS

CERAMIC / TANTALUM Headings Headings


CERAMIC / TANTALUM

PAS-IND-PN-02

PAS-IND-PN-03

PAS-IND-PV-01

PAS-IND-PV-02

PAS-IND-PV-03

PAS-IND-EQ-01

PAS-IND-EQ-02

PAS-IND-EQ-03

PAS-IND-PF-01

PAS-IND-PF-02

PAS-IND-PF-03

PAS-IND-QG-01

PAS-CER-AN-01

CERAMIC / TANTALUM


CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM


CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM


CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM


CERAMIC / TANTALUM

CERAMIC / TANTALUM

PAS-CER-AN-02

PAS-CER-DS-01

PAS-CER-DS-02

PAS-CER-DS-03

PAS-CER-MA-01

PAS-CER-MA-02

PAS-CER-MA-03

PAS-CER-MA-04

PAS-CER-MA-05

PAS-CER-MA-06

PAS-CER-MA-07

PAS-CER-MA-08

PAS-CER-DE-01

PAS-CER-DE-02

PAS-CER-DE-03

PAS-CER-DE-04

PAS-CER-DE-05

PAS-CER-DE-06

PAS-CER-PR-01

PAS-CER-PR-02

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM


CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM


CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM


CERAMIC / TANTALUM

CERAMIC / TANTALUM

CERAMIC / TANTALUM


CERAMIC / TANTALUM

PAS-CER-PR-03

PAS-CER-PR-04

PAS-CER-PR-05

PAS-CER-PR-06

PAS-CER-PR-07

PAS-CER-PR-08

PAS-CER-PN-01

PAS-CER-PN-02

PAS-CER-PN-03

PAS-CER-PV-01

PAS-CER-PV-02

PAS-CER-PV-03

PAS-CER-EQ-01

PAS-CER-EQ-02

PAS-CER-EQ-03

PAS-CER-PF-01

CERAMIC / TANTALUM


CERAMIC / TANTALUM

Film capacitors Headings Headings


Film capacitors PAS-FLM-AN-01

Film capacitors PAS-FLM-AN-02


Film capacitors

Film capacitors

Film capacitors


Film capacitors

Film capacitors

Film capacitors

Film capacitors

Film capacitors

Film capacitors

PAS-CER-PF-02

PAS-CER-QG-01

PAS-FLM-DS-01

PAS-FLM-DS-02

PAS-FLM-DS-03

PAS-FLM-MA-01

PAS-FLM-MA-02

PAS-FLM-MA-03

PAS-FLM-MA-04

PAS-FLM-MA-05

PAS-FLM-MA-06

Film capacitors


Film capacitors

Film capacitors

Film capacitors

Film capacitors

Film capacitors

Film capacitors

Film capacitors


Film capacitors

Film capacitors

Film capacitors

Film capacitors


Film capacitors

Film capacitors

Film capacitors


PAS-FLM-MA-07

PAS-FLM-DE-01

PAS-FLM-DE-02

PAS-FLM-DE-03

PAS-FLM-DE-04

PAS-FLM-DE-05

PAS-FLM-DE-06

PAS-FLM-DE-07

PAS-FLM-PR-01

PAS-FLM-PR-02

PAS-FLM-PR-03

PAS-FLM-PR-04

PAS-FLM-PN-01

PAS-FLM-PN-02

PAS-FLM-PN-03

Film capacitors

Film capacitors

Film capacitors


Film capacitors

Film capacitors

Film capacitors


Film capacitors

Film capacitors


Film capacitors

PAS-FLM-QG-01

QUARTZ CRYSTAL / SAW Headings


QUARTZ CRYSTAL / SAW




PAS-FLM-PV-01

PAS-FLM-PV-02

PAS-FLM-PV-03

PAS-FLM-EQ-01

PAS-FLM-EQ-02

PAS-FLM-EQ-03

PAS-FLM-PF-01

PAS-FLM-PF-02

PAS-QUA-AN-01

PAS-QUA-AN-02

PAS-QUA-DS-01

















PAS-QUA-DS-02

PAS-QUA-DS-03

PAS-QUA-MA-01

PAS-QUA-MA-02

PAS-QUA-MA-03

PAS-QUA-MA-04

PAS-QUA-MA-05

PAS-QUA-MA-06

PAS-QUA-MA-07

PAS-QUA-MA-08

PAS-QUA-MA-09

PAS-QUA-MA-10

PAS-QUA-MA-11

PAS-QUA-MA-12






















PAS-QUA-DE-01

PAS-QUA-DE-02

PAS-QUA-DE-03

PAS-QUA-DE-04

PAS-QUA-DE-05

PAS-QUA-DE-06

PAS-QUA-DE-07

PAS-QUA-PR-01

PAS-QUA-PR-02

PAS-QUA-PR-03

PAS-QUA-PR-04

PAS-QUA-PR-05

PAS-QUA-PR-06

PAS-QUA-PR-07

PAS-QUA-PR-08

PAS-QUA-PR-09

PAS-QUA-PR-10

PAS-QUA-PN-01

PAS-QUA-PN-02














QUARTZ CRYSTAL / SAWAl-Cap Headings Headings

Al-Cap Headings Headings

Al-Cap

Al-Cap


PAS-QUA-PN-03

PAS-QUA-PV-01

PAS-QUA-PV-02

PAS-QUA-PV-03

PAS-QUA-EQ-01

PAS-QUA-EQ-02

PAS-QUA-EQ-03

PAS-QUA-PF-01

PAS-QUA-PF-02

PAS-QUA-QG-01

PAS-ALU-AN-01

PAS-ALU-AN-02

Al-Cap

Al-Cap

Al-Cap


Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap


Al-Cap

Al-Cap

PAS-ALU-DS-01

PAS-ALU-DS-02

PAS-ALU-DS-03

PAS-ALU-MA-01

PAS-ALU-MA-02

PAS-ALU-MA-03

PAS-ALU-MA-04

PAS-ALU-MA-05

PAS-ALU-MA-06

PAS-ALU-MA-07

PAS-ALU-MA-08

PAS-ALU-MA-09

PAS-ALU-DE-01

PAS-ALU-DE-02

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap


Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap

Al-Cap


Al-Cap

Al-Cap

Al-Cap


Al-Cap

PAS-ALU-DE-03

PAS-ALU-DE-04

PAS-ALU-DE-05

PAS-ALU-DE-06

PAS-ALU-DE-07

PAS-ALU-DE-08

PAS-ALU-DE-09

PAS-ALU-DE-10

PAS-ALU-PR-01

PAS-ALU-PR-02

PAS-ALU-PR-03

PAS-ALU-PR-04

PAS-ALU-PR-05

PAS-ALU-PR-06

PAS-ALU-PR-07

PAS-ALU-PR-08

PAS-ALU-PN-01

PAS-ALU-PN-02

PAS-ALU-PN-03

PAS-ALU-PV-01

Al-Cap

Al-Cap


Al-Cap

Al-Cap

Al-Cap


Al-Cap

Al-Cap

Al-Cap


Al-Cap

NTC Headings Headings


NTC

NTC


NTC

PAS-ALU-PV-02

PAS-ALU-PV-03

PAS-ALU-EQ-01

PAS-ALU-EQ-02

PAS-ALU-EQ-03

PAS-ALU-PF-01

PAS-ALU-PF-02

PAS-ALU-PF-03

PAS-ALU-QG-01

PAS-NTC-AN-01

PAS-NTC-AN-02

PAS-NTC-DS-01

NTC

NTC


NTC

NTC

NTC

NTC

NTC

NTC


NTC

NTC

NTC

NTC

NTC

NTC

PAS-NTC-DS-02

PAS-NTC-DS-03

PAS-NTC-MA-01

PAS-NTC-MA-02

PAS-NTC-MA-03

PAS-NTC-MA-04

PAS-NTC-MA-05

PAS-NTC-MA-06

PAS-NTC-DE-01

PAS-NTC-DE-02

PAS-NTC-DE-03

PAS-NTC-DE-04

PAS-NTC-DE-05

PAS-NTC-DE-06

NTC


NTC

NTC

NTC

NTC

NTC

NTC

NTC


NTC

NTC

NTC


NTC

NTC

NTC


NTC

PAS-NTC-DE-07

PAS-NTC-PR-01

PAS-NTC-PR-02

PAS-NTC-PR-03

PAS-NTC-PR-04

PAS-NTC-PR-05

PAS-NTC-PR-06

PAS-NTC-PR-07

PAS-NTC-PN-01

PAS-NTC-PN-02

PAS-NTC-PN-03

PAS-NTC-PV-01

PAS-NTC-PV-02

PAS-NTC-PV-03

PAS-NTC-EQ-01

NTC

NTC


NTC

NTC


NTC

PTC Headings Headings


PTC

PTC


PTC

PTC

PTC


PTC

PTC

PAS-NTC-EQ-02

PAS-NTC-EQ-03

PAS-NTC-PF-01

PAS-NTC-PF-02

PAS-NTC-QG-01

PAS-PTC-AN-01

PAS-PTC-AN-02

PAS-PTC-DS-01

PAS-PTC-DS-02

PAS-PTC-DS-03

PAS-PTC-MA-01

PAS-PTC-MA-02

PTC

PTC

PTC

PTC


PTC

PTC

PTC

PTC

PTC

PTC

PTC


PTC

PTC

PTC

PTC

PTC

PTC

PTC


PTC

PAS-PTC-MA-03

PAS-PTC-MA-04

PAS-PTC-MA-05

PAS-PTC-MA-06

PAS-PTC-DE-01

PAS-PTC-DE-02

PAS-PTC-DE-03

PAS-PTC-DE-04

PAS-PTC-DE-05

PAS-PTC-DE-06

PAS-PTC-DE-07

PAS-PTC-PR-01

PAS-PTC-PR-02

PAS-PTC-PR-03

PAS-PTC-PR-04

PAS-PTC-PR-05

PAS-PTC-PR-06

PAS-PTC-PR-07

PAS-PTC-PN-01

PTC

PTC


PTC

PTC

PTC


PTC

PTC

PTC


PTC

PTC


PTC

VDR Headings Headings


VDR

VDR


PAS-PTC-PN-02

PAS-PTC-PN-03

PAS-PTC-PV-01

PAS-PTC-PV-02

PAS-PTC-PV-03

PAS-PTC-EQ-01

PAS-PTC-EQ-02

PAS-PTC-EQ-03

PAS-PTC-PF-01

PAS-PTC-PF-02

PAS-PTC-QG-01

PAS-VDR-AN-01

PAS-VDR-AN-02

VDR

VDR

VDR


VDR

VDR

VDR

VDR

VDR

VDR


VDR

VDR

VDR

VDR

VDR

VDR

PAS-VDR-DS-01

PAS-VDR-DS-02

PAS-VDR-DS-03

PAS-VDR-MA-01

PAS-VDR-MA-02

PAS-VDR-MA-03

PAS-VDR-MA-04

PAS-VDR-MA-05

PAS-VDR-MA-06

PAS-VDR-DE-01

PAS-VDR-DE-02

PAS-VDR-DE-03

PAS-VDR-DE-04

PAS-VDR-DE-05

PAS-VDR-DE-06

VDR

VDR

VDRPAS-VDR-DE-09


VDR

VDR

VDR

VDR

VDR

VDR

VDR


VDR

VDR

VDR


VDR

VDR

VDR


PAS-VDR-DE-07

PAS-VDR-DE-08

PAS-VDR-PR-01

PAS-VDR-PR-02

PAS-VDR-PR-03

PAS-VDR-PR-04

PAS-VDR-PR-05

PAS-VDR-PR-06

PAS-VDR-PR-07

PAS-VDR-PN-01

PAS-VDR-PN-02

PAS-VDR-PN-03

PAS-VDR-PV-01

PAS-VDR-PV-02

PAS-VDR-PV-03

VDR

VDR

VDR


VDR

VDR


VDR





--

I

PAS-VDR-EQ-01

PAS-VDR-EQ-02

PAS-VDR-EQ-03

PAS-VDR-PF-01

PAS-VDR-PF-02

PAS-VDR-QG-01

P

A letter or "●" indicates that performance of that stress test should be considered for the appropriate process change.

ACBEFNRSWY

Note 1:

Based on ZVEI-DQM: Revision 2.2.4 - July 2015

HW-DQM Version 3_0_5

Type of change No


ANY

Any change with impact on special customer characteristics/contractual agreements P

P

DATASHEET

P



Any change with impact on processability/manufacturabiliy at customer, which is not covered in the matrix below.

Change of datasheet parameters/electrical specification (min./max./typ. values) and / or AC/DC specification

Changes

rev3 vs. rev2

Correction of data sheet I

Specification of additional parameters I

MATERIAL

P

P

P

P

P

Change of supplier of material -

DESIGN

Changes of termination, surface finish, shape, color, appearance or dimension structure I

-

PROCESS

-

-

-

-

-

-

-

Process integrity: tuning within specification -

PACKING / SHIPPING - NEW MATERIAL, CRITICAL DIMENSIONS

Change of material composition - Ink/Wire material of Resistor element

Change of material composition - Ink/Wire material of Terminal element

Change of material composition - Package/ Mold

Change of material composition - Passivation

Change of material composition - Substrate matreial

Changes of inner construction - Passivation

Changes in process technology or manufacturing methods - Ink Fire

Changes in process technology or manufacturing methods - Ink Print

Changes in process technology or manufacturing methods - Trim

Changes in process technology or manufacturing methods - Lead Form

Changes in process technology or manufacturing methods - Termination Attach

Changes in process technology or manufacturing methods - Marking

Changes in process technology or manufacturing methods - Molding

Packing / shipping specification change (loosening of tolerances) P

Dry pack requirements change P

Change of carrier (tray, reel) P

PACKING / SHIPPING - VISUAL INSPECTION

Change of labelling I

Change of product marking I

Change of packing/shipping specification P

LOGISTICS / CAPACITY / TESTING - EQUIPMENT

P

-

Change in final test equipment type that uses a different technology P

LOGISTICS / CAPACITY / TESTING - PROCESS FLOW

P

Elimination or addition of a manufacturing process step -

LOGISTICS / CAPACITY / TESTING - Q-GATE

-

INDUCTORS

ANY


Production from a new equipment/tool which uses a different technology or which due to its unique form or function can be expected to influence the integrity of the final product

Production from a new equipment/tool which uses the same basic technology (replacement equipment or extension of existing equipment pool)

Manufacturing site transfer or movement of a part of production process to a different location/site

Change of test coverage used by the supplier to ensure data sheet compliance (e.g., elimination/addition of electrical measurement/test flow block, relaxation/enhancement of monitoring procedure or sampling)

P

DATASHEET

P



MATERIAL

P

P

P

P

P

P

P

P


Change of material composition - Potting Material P



Change of material composition - Bobbin Material

Change of material composition - Core Material

Change of material composition - Insulation Material

Change of material composition - Lead Material

Change of material composition - Mold Compound

Change of material composition - Solder Material

Change of material composition - Wire / Foil Material

Change of material composition - Glue

DESIGN

I

I

I

-

-

-

I

PROCESS

-

-

-

-

-

-

-

-


Changes in process technology or manufacturing methods - Potting -



Changes of termination, surface finish, shape, color, appearance or dimension structure - Bobbin

Changes of termination, surface finish, shape, color, appearance or dimension structure - Lead/Terminals

Changes of termination, surface finish, shape, color, appearance or dimension structure - Mold

Changes of inner construction - Core Construction

Changes of inner construction - Insulation System

Changes of inner construction - Wire / Foil Construction

Changes of termination, surface finish, shape, color, appearance or dimension structure - Potting Material

Changes in process technology or manufacturing methods - Insulation Strip

Changes in process technology or manufacturing methods - Lead Prep. / Plating

Changes in process technology or manufacturing methods - Terminal Attach



Changes in process technology or manufacturing methods - Soldering Internal Connections

Changes in process technology or manufacturing methods - Winding Insulation

Changes in process technology or manufacturing methods - Winding Wire








P

-



P


Elimination of final electrical measurement / test flow block I


-

CERAMIC / TANTALUM

ANY






P

DATASHEET

P



MATERIAL

PPP

P

P

P

P


DESIGN

I

I

I

-

-

-

PROCESS

-

-



Change of material composition - Ceramic Binder

Change of material composition - Tantalum Binder

Change of material composition - Dielectric

Change of material composition - Electrode Attach

Change of material composition - Electrode Material

Change of material composition - Encapsulation

Change of material composition - Lead material / Termination

Changes of termination, surface finish, shape, color, appearance or dimension structure - Lead DiameterChanges of termination, surface finish, shape, color, appearance or dimension structure - Termination AreaChanges of termination, surface finish, shape, color, appearance or dimension structure - Termination Interface

Changes of inner construction - Electrode Thickness

Changes of inner construction - Layer Thickness

Changes of inner construction - Number of Layers

Changes in process technology or manufacturing methods - Dicing

Changes in process technology or manufacturing methods - Electrode apply

-

-

-

-

-

Process integrity: tuning within specification -PACKING / SHIPPING - NEW MATERIAL, CRITICAL DIMENSIONS









P

-



P

Changes in process technology or manufacturing methods - Firing

Changes in process technology or manufacturing methods - Lamination

Changes in process technology or manufacturing methods - Particle Size

Changes in process technology or manufacturing methods - Screening/Printing

Changes in process technology or manufacturing methods - Termination






-

Film capacitors

Any


P

DATASHEET

P



MATERIAL

P

P

P

P

P

P




Change of material composition - Sealing Compound

Change of material composition - Package

Change of material composition - Lead/Termination

Change of material composition - Metal Spray (Schoop)

Change of material composition - Film

Change of material composition - Metal Foil


DESIGN

I

I

-

I

-

-

I

PROCESS

-

-

-







Changes of termination, surface finish, shape, color, appearance or dimension structure - Lead Diameter / Thickness

Changes of termination, surface finish, shape, color, appearance or dimension structure - Termination Area

Changes of inner construction - Inner Connection

Changes of termination, surface finish, shape, color, appearance or dimension structure - Appearance

Changes of inner construction - Film/Foil

Changes of inner construction - Insulation System

Changes of termination, surface finish, shape, color, appearance or dimension structure - Package

Changes in process technology or manufacturing methods - Package


Changes in process technology or manufacturing methods - Winding




LOGISTICS / CAPACITY / TESTING - EQUIPEMEMENT

P

-



P



-


ANY


P

DATASHEET

P









MATERIAL

P

P

P

P

P

P

P

P

P

P

P


DESIGN

Change of material composition - Quartz Blank

Change of material composition - Base

Change of material composition - Lead / Termination

Change of material composition - Sealing

Change of material composition - Can / Cap

Change of material composition - Blank Support

Change of material composition - Overmold

Change of material composition - Case Sealing

Change of material composition - Electrode

Change of material composition - Insulator

Change of material composition - Marking

I

I

I

I

I

-

-

PROCESS

-

-

-

-

-

-

-

-

-





Changes of termination, surface finish, shape, color, appearance or dimension structure - Base

Changes of termination, surface finish, shape, color, appearance or dimension structure - Lead / Termination

Changes of termination, surface finish, shape, color, appearance or dimension structure - Can / Cap

Changes of termination, surface finish, shape, color, appearance or dimension structure - Package

Changes of termination, surface finish, shape, color, appearance or dimension structure - Insulator

Changes of inner construction - Quartz Blank

Changes of inner construction - Blank Support

Changes in process technology or manufacturing methods - Quartz Blank

Changes in process technology or manufacturing methods - Blank Etching / Cleaning

Changes in process technology or manufacturing methods - Electrode Formation

Changes in process technology or manufacturing methods - Trimming

Changes in process technology or manufacturing methods - Bonding / Annealing

Changes in process technology or manufacturing methods - Can / Cap Attaching



Changes in process technology or manufacturing methods - Aging







P

-



P



-

Aluminium Electrolytic CapacitorAny


P

DATASHEET






P



MATERIAL

P

P

P

P

P

P

P

P


DESIGN

I

I


Change of material composition - Housing

Change of material composition - Sealing

Change of material composition - External Insulation

Change of material composition - Lead / Termination

Change of material composition - Internal Insulation / Paper

Change of material composition - Electrolyte

Change of material composition - Tape Material

Change of material composition - Base Plate

Changes of termination, surface finish, shape, color, appearance or dimension structure - Wire DiameterChanges of termination, surface finish, shape, color, appearance or dimension structure - Termination

I

I

-

-

-

-

-

-

PROCESS

-

-

-

-

-

-

-








Changes of termination, surface finish, shape, color, appearance or dimension structure - Rubber Sealing

Changes of inner construction - Aluminum Foil

Changes of inner construction - Seperator

Changes of inner construction - Seperator Density

Changes of inner construction - Inner Connection

Changes of inner construction - Closing Tape

Changes of inner construction - Foil


Changes in process technology or manufacturing methods - Winding

Changes in process technology or manufacturing methods - Impregnation

Changes in process technology or manufacturing methods - Assembly

Changes in process technology or manufacturing methods - Aging / Testing

Changes in process technology or manufacturing methods - Trim & Form Leaded

Changes in process technology or manufacturing methods - Trim & Form SMD




P

-



P


Elimination of final electrical measurement / test flow block I


-

NTC

Any


P

DATASHEET

P









MATERIAL

P

P

P

P

P


DESIGN

I

I

I

I

-

-


Change of material composition - Ceramic

Change of material composition - Inner Electrode



Changes of termination, surface finish, shape, color, appearance or dimension structure - Lead Diameter


Changes of termination, surface finish, shape, color, appearance or dimension structure - Internal Connection


Changes of inner construction - Electrode


-

PROCESS

-

-

-

-

-

-










P









-



P



-

PTC

Any


P

DATASHEET

P



MATERIAL

P

P








P

P

P


DESIGN

I

I

I

I

-

-

-

PROCESS

-

-

-

-

-

-



Change of material composition - Polymer























P

-



P



-

VDR

Any


P

DATASHEET






P



MATERIAL

P

P

P

P

P


DESIGN

I

I

I

I

-

-




Change of material composition - Electrode









-

-

-

PROCESS

-

-

-

-

-

-











Changes of inner construction - Grain size

Changes of inner construction - Grain boundary size







P

-



P



-





Not required

Information Note required





PCN required


CONDITIONS NoTermination equipment only

Ceramics only

Comparative data (unchanged vs. changed) required

Capacitive trimmers only

Film products only

Networks only

Resistors only

SMD components only

Wirewound products only

Component not hermitically sealedFor parts marked with ink only. Laser and stamp marked parts shall be exempt.

=> Please mark 'NO' with 'x', default is 'YES'

Examples to explain

Yes

P Not relevant for technical evaluation.

P Technical interface means component terminals.

P e.g. tighten of electrical parameter distribution


Understanding of component experts

Change of application relevant information Not included: Editorial changes.

Changes

rev3 vs. rev2

P

P e.g. adding new (tested) parameter.

P Change of Ink / Wire material e.g. resistor paste, NiCr, resistor wire

P Change of Ink / Wire material

P Change of Package e.g. for chip res.: final coating, epoxy

P e.g. change of glass

P Change of substrate material

P e.g. for 2nd source purpose

P Change of package

P e.g. change of glass, laquer, epoxy, ...

P

P

P e.g. change from mill trimming to laser trimming

P Change of lead form process e.g. change from bending to punching

P

P e.g. change from tampon printing to laser marking

P

P Variation within process specification. e.g. process control

No technical change of the product, only correction in description (wording, drawing, …)(I): In case of editorial changes.(P): In case of impact on product integrity.

e.g. data sheet correction because of new information about component behavior

Description of a new not previously covered parameter. No technical change of the product.(I): no influence(P): Risk assessment depending on change for each application to provide evidence of additional parametes (stat. evaluation)

e.g. AgPd paste, Ag paste, lead wire , NiCr for side termination

Change of Passivation /Inner protection

Change to a new or additional material supplier at component manufacturer.

Change of passivation/Inner protection

Change of ink fire processe.g. change of firing profilee.g. change from normal atmospher to nitrogen atmospher

Change of ink print process

Change of trim process

Change of termination attach process e.g. chip resistors: electroplating processe.g. welding of leads for through put devices.

Change of marking process

Change of molding process

P Change of packing specification. e.g. number of pieces on reel.

P Change of dry pack requirements.

P Change of carrier

P Change of labelling, also on reel.

P Marking on device.

P

P

P

P e.g. change of tester platform

P

P

P Change of test coverage.


e.g. change of MSLe.g. change in dry pack assurance (HIC, MBB)

e.g. change by materiale.g. change by geometry.

(I) e.g. additional information (RoHS stamp)(P) e.g. change of customer specific information

e.g. change of content of markinge.g. change of method of markinge.g. change of appearance of marking

Change in packing specification which does not described a change of dimensions or material of the packing.

e.g. change of documentation in packing specification

Change in process technique which is not already covered above.Note: Major changes affecting the product not covered by the table require also a PCN.

e.g. new equipment supplier with different process concept

PCN required for dedicated equipment for sensitive component production.

e.g. additional equipment to increase production capacitye.g. replacement of same equipment

Change of final test equipment which use different technology.PCN required for dedicated equipment for sensitive parameters.

Change of manufacturing site.Note: Reorganization inside one plant/site is not affected!

Movement or transfer of manufacturing site or process step(s) to a different location/site.

Change of manufacturing process sequence.

e.g. washing / cleaning processe.g. change of order of processes

e.g. change from 100% to sample inspectione.g. test flow block, reduction from three to two temperature measurementse.g. change in burn in/run in process.



P


P e.g. change from Thermoset to Thermoplastic

P e.g. change from NiZn into MnZn

P Change of insulation material

P Change of lead material

P Change of mold compound material

P e.g. change of SnAgCu composition

P e.g. change of Cu composition

P Change of glue material e.g. change from glue A into glue B


P Change of potting material e.g. change from epoxy resin to silicon





Material without magnetic function ("Spulenkörper") typically made by plastic material

Change of core material, which is material with magnetic function

e.g. wire insulation, insulation tapes, …e.g. change from Polyurethane to Polyamide

e.g. change from tin coverd to non-coverd lead material

e.g. change to green mold

Change of solder material at internal connection.

Wire for wounded inductors.Foil for multilayer inductors (inner electrode).


P e.g. construction / dimension change of bobbin

P Change of lead/terminals e.g. change from PTH terminals to SMD terminals

P Change of mold e.g. new mold material with different colour

P

P Change of insulation system

P Change of wire / foil dimensions

P Change of potting dimension e.g. change of potting (filling) height

P (Mechanical) removal of insulation.

P Change of lead prep. / plating e.g. change from hot dip tinning to electroplating

P

P e.g. change from ink marking to laser marking

P

P e.g. change from hot tip tinning to resistance welding

P Change of winding - insulation e.g. change from manual to automatic process

P Change of winding - wire


P Change of potting process


Material without magnetic function ("Spulenkörper") typically made by plastic material

Change of core construction, which is material with magnetic function

e.g. change fromdrum core & shield core into pot core & cover plate core

e.g. wire insulation, insulation tapes, …e.g. change from Polyurethane to PTFE (Teflon)

e.g. change from round cross section to rectangular cross sectione.g. from single wire to litz wire

e.g. change from mechanical removal to laser removal

Connection of wire terminal and / orconnection of termination to core/bobbin.

e.g. chanfe from Manual winding to Semi-automtic winding (winding of wire on terminal)

Change of marking process

Change of molding process e.g. change from one component molding to two component molding (other technology needed)

Change of soldering internal connection

e.g. change from semi-automatic winding to full automatic winding

e.g. change from manual potting process to automatic potting process

P Change of drypack requirements.

P Change of carrier



P

P e.g. introduction of potting process

P e.g. duplication of existing winding machine


P

P

P e. g. elimination of High-voltage measurement
















Reduction of final testing.PCN required for dedicated final test reductions for sensitive parameters.




P


P Binder material (ceramic)

P Binder material (tantal) e.g. change from wax 1 to wax 2

P Dielectric change (ceramic only) e.g. change from ceramic A into ceramic B

P

P e.g. change from spehric to flake shape (Ni paste)

P Encapsulation e.g. change from epoxy1 into epoxy2

P Lead material / Termination e.g. change from SnPb to pure Sn


P Lead diameter e.g. change from 0.8mm into 0.6mm

P Termination area

P Terminal interface e.g. additional layer in termination

P Electrode thickness (ceramic only) e.g. Ni layer change from 2.5µm into 3.5µm

P Layer thickness (dielectric thickness)

P see also layer thickness

P Change of dicing e.g. change from cutting to sawing

P Electrode apply (dielectric layer process) e.g. change from wet to dry process





Electrode attach (only tantal, glue, carbon, Ag)

e.g. change of Ag particle size in conductive adhesive

Electrode Material (only ceramic, inner elctrode)


e.g. change in width of termination from 0.1 -0.3mm into 0.2 - 0.4 mm

e.g. Ceramic layer thickness changes from 3µm into 5µm.

Number of layers (ceramic only). Allways in combination with PAS-CER-DE-05.

P Change of firing profile e.g. seperation of decarbonization and firing profile.

P Change of lamination / press techinque e.g. standard pressing to iso static pressing.

P e.g. change D50 from 0.5µm into 0.4µm

P Change of screening / printing e.g. change from screen printing into offset printing

P




P Change of carrier



P

P e.g. change from wet to dry technology.

P e.g. elimination of manual handling processes


P

Change of powder particle size. Allways in combination with PAS-CER-MA-03.

Change for termination preparation like plating or apply of termination base layer.

e.g. change in plating technology (final termination)e.g. change from dip in paste to platimg (apply)












P





P


P e.g. change of epoxy or PU composition

P Change material of package

P

P e.g. from Zn to Al

P

P e.g. change from Al to Al-Zn alloy

Change of manufacturing process sequence. e.g. washing / cleaning process

e.g. change of order of processes






Typicaly change within epoxy or PU sealing without effect to mechanical properties.Note: Change from epoxy sealing into PU sealing (both direction) will lead to generate a new product.

Change material of package,e.g. change from PBT to PPSe.g. change of glas fiber ratio

Change of Lead/TerminationNote: If change of lead frame material leads to an ESR change, than change of data sheet (PAS-FLM-DS-01) has to be respected.

e.g. change of basis material from Cu to Fee.g. change of finishing from SnPb to Sn

Change of Metal Spray (Schoop): Use different material for metal spray process for boxed and naked typesChange of film material for boxed and naked types

e.g. change of additives (<1%) of film composition (same raw material)

Change of metal foil for inner electrode


P Change of lead diameter thickness

P

P Change of inner connection

P e.g. change or adding of colour on component

P e.g. change to a different foil supplier.

P

P

P

P

P e.g. change of tempering temperature




P Change of carrier

Change to a new or additional material supplier at component manufacturer which are described above.

e.g. change lead diameter from 0.5 to 0.4 mme.g. change of thickness of terminal

Changes of termination area are changes which are affecting the area for connection of component and PCB

e.g. change of termination layer thicknesse.g. change in termination dimensions / shape

e.g. change from soldered connection to welded connection

Change of appearance.(I): Change in appaerance without impact on product integrity.(P): Change in appaerance with impact on product integrity. Note: Marking on device is defined as seperate change (PAS-FLM-PV-02).

Change of film or foil design

Change of inner insulation to protect winding element against housing.

e.g. change of potting materiale.g. change of number of inner insulation layers (depending of insulation material thickness)

Change of packaging e.g. change of dimension or shapee.g. change of surface

Change of resin filling or hardening process (relevant for boxed types only)

e.g. change in resin filling process (mixing, sequences, potting, …)e.g. change in hardening process (temperature, time, …)

Change Terminal Attach Process to winding element for boxed and nacked types

e.g. spraying and / or galvanic process,e.g. welding / soldering

Change of winding, flattening or tempering process





P

P e.g. implementation of new machines

P e.g. extension of existing machin capacity


P

P









Change in process technique which is not already covered above.Note: Significant changes affecting the product not covered by the table require also a PCN.









P


P

P Changing of the material of the base. e.g. change from ceramic to epoxy

P Change of Lead/Termination e.g. change of plating finish. (eg:Au, AgPd,Sn)

P Change of Glass Seal

P Changing of the material of the can/cap

P Change of Blank Support

P Change of Overmold

P e.g. change from solder paste to adhesive glue

P e.g. change from Au to Ag

P

P Change of marking material





A change of Quartz Blank is avery rare case. Mainly for SAW-Filter

e.g. change to lead free glass

e.g. change from metal to ceramic material

e.g. change of glue (Silicone to Epoxy)e.g. change metal holders (old types)

e.g. change to green mold compounde.g. change of filler particles

Change of Case Sealing. Change of material for seam weldingRelevant for components with ceramic base and metall cap.

Change of Electrode material on crystal blank.

Change of Insulator. Only for leaded typesNot relevant for typical SMD.

e.g. Insulating plate under crystale.g. Glass sealing for leads

e.g. change of inke.g. chemical to environmental friendly


P Change of Base design e.g. due to miniaturization purpose.

P e.g. change lead design to improve reliability.

P Change of Can/Cap design e.g. due to miniaturization purpose.

P

P

P Change of Quartz Blank design

P Change of Blank Support design

P Change of Quartz Blank process e.g. change of cutting or lapping technology

P e.g. change from liquid etching to plasma etching

P Change of Electrode Formation process e.g. change from evaporation to sputtering

P e.g. change from evaporation to ion beam

P

P Change of Cap/Can attaching process

P

P Change of Marking process

P




Change of Lead/Termination design. Change geometry or terminal pad or lead form

Change of Package (Molded). Change the design of the package.Not relevant for typical SMD.

e.g. change from welded device to glued device (case sealing)

Change of Insulator design. Only for leaded types (old technology)Not relevant for typical SMD.

e.g. change dimension of blank, add phase, electrode design, …

e.g. change design of glue shapee.g. change design of metall supporter

Change of Blank Etch/Clean processUsing different / new technology

Change of Auto Trim process (Method of final frequency tuning)

Change of Blank bonding / annealing process. Change of method how apply conductive material to base or blank

e.g. change of the sealing methode.g. change from batch oven to reflow oven

Change of Overmolding process. Not relevant for typical SMD. e.g. change of overmold process parameter

e.g. change from inked marking to laser markinge.g. marking of pin 1e.g. change of appearance (additional marking)

Change of Aging process. Typically no aging done on quartz crystals.

If aging is done: e.g. change of times or temperatures


P Change of carrier



P

P

P


P

P



P

e.g. change by material e.g. change by geometry.






e. g. new equipment supplier with different process concept









Technical interface means component terminals.See processability on board level.


P


P Change of housing e.g. change Al alloy for housing

P Change of sealing

P Change of external insulation / sleeving

P Change of lead or outer termination.

P Change of paper type / internal insulation e.g. change of paper thickness 50 µm to 40µm

P Change of electrolyte e.g. change in formulation

P Change of closing tape material e.g. change of glue or basis material

P Change of base plate material e.g. change of used plastic material


P Change of wire diameter e.g. change from 0.8 into 0.6 mm wire diameter.

P e.g. change from matt tin into bright tin.





e.g. change of rubber compounde.g. change of sealing disc material (axial, Snap in)

e.g. change from PVC into PETe.g. change of colour

e.g. change of leadframe from iron into coppere.g. change of leadframe finish from tin/lead into tin


Change of termination appearanceFor welded Al capacitors only.

P

P e.g. change of profile / design

P Change of Al foil width e.g. change of width

P Change of seperator width e.g. change of width

P Change of seperator density e.g. change of seperator density/resistivity

P Change of inner connection e.g. change of shape/dimension

P Change of closing tape e.g. change of dimension

P Change of foil type

P Change of terminal attach process e.g. change of stitching / welding layout

P Change of winding process e.g. change of material disposition

P Change of impregantion

P Change of assembly process

P Change of aging/testing process

P Change of trim & form process (leaded) e.g. change of tooling shape or bending procedure

P Change of trim & form process (SMD) e.g. change of tooling shape or bending procedure




P Change of carrier


Change of appearanceNote: Marking on device is defined as seperate change (PAS-ALU-PV-02).

e.g. change of colour/appearancee.g. change of safety vent shape

Change of rubber sealing stand-off shape (for radial)

e.g. change of etching levele.g. change of thickness

e.g. change of bulk process into individual impregnation

e.g. change of sealing methode.g. change of assembly process sequence

e.g. change of timing, voltage or temperature of process





P

P

P


P

P

P e.g. elemination of additional impedance control









e. g. new equipment supplier with different process concept








Reduction of final testing.PCN required for dedicated final test reductions for sensitive parameters.



P


P

P Change of ceramic composition e.g. changes in additives amount

P e.g. change from AgPt material to AgPd material

P Change of encapsulation material.

P e.g. change from SnPb to pure Sn


P Change of lead diameter e.g. change lead diameter from 0.5 to 0.4 mm

P Change of termination area


P

P

P e.g. change from 1.5µm into 1.0µm




Change of Binder Material to bind ceramics.

Change of inner electrode material (ink material). Valid in case of multilayer structures only.

e.g. change of coatinge.g. change of additives in an insulation.

Change of lead or outer termination. Change of lead (finish) material, termination material or attachment material.


e.g. change of termination layer thicknesse.g. change in termination dimensions


Change of appearance.Note: Marking on device is defined as seperate change (PAS-FLM-PV-02).

e.g. change or adding of colour on componentMainly in combination with other changes!

Change of electrode layer thickness or geometry. For multi-layer technology only. e.g. change of electrode design

Change of ceramic layer thickness. For multi-layer technology only.


P e.g. stamp press to isostatic press

P Change of firing / sintering profile

P Change of dicing / slicing e.g. change from cutting to sawing

P

P e.g. change of inner electrode lay down method.

P




P Change of carrier



P

P e. g. change from wet to dry technology.

Change of number of ceramic or electrode layers. For multi-layer technology only. Allways in combination with PAS-NTC-DE-06.

Change of lamination / press technique technology

e.g. temperature and / or time and / or atmosphere. e.g. from tunnel to batch kiln.



Change of electrode apply. For multi layer technology only.

Change in assembly process for leaded or encapsulated devices.

e.g. soldering method for lead attach to element or coating / encapsulation process










P

P



P


P


P















P Change of polymer composition







P

P



P e.g. stamp press to isostatic press


P Change of dicing / slicing e.g. change from cutting to sawing

P


P




Change of lead (finish) material, termination material or attachment material.




Change of appearance.Note: Marking on device is defined as seperate change (PAS-PTC-PV-02).


Change of electrode layer thickness or geometry. e.g. change of electrode design


Change of number of ceramic or electrode layers. For multi-layer technology only. Allways in combination with PAS-PTC-DE-06.

Change of lamination / press technique technology








P Change of carrier



P




P

P



P

















P


P


P e.g. change from AgPt material to AgPd material







P

P







Change of inner electrode material. Valid in case of multilayer structures only.


Change of lead (finish) material, termination material or attachment material.




Change of appearance.Note: Marking on device is defined as seperate change (PAS-VDR-PV-02).


Change of electrode layer thickness or geometry. e.g. change of electrode design



P e. g. change of grain size.

P e.g. change of grain boundary size.

P e.g. pressures or temperature


P Change of dicing e.g. change from cutting to sawing

P


P




P Change of carrier



P

Change of number of ceramic or electrode layers. For multi-layer technology only. Allways in combination with PAS-VDR-DE-06.

Change of grain size. Grain size is a result of process and / or material change.

Change of grain boundary size. Grain boundary size is a result of process and / or material change.

Change of lamination / press technique method
















P

P















Device evaluationMATERIAL PERFORMANCE TEST RESULTS (on the basis of AEC-Q200 Rev.D)

Further applicable conditionsA

EC-Q

200

Rev

isio

n D

Hig

h Te

mp

Exp

osur

e (S

tora

ge)

3

* - - - -

B - - - -

A - - - -

Eval

uatio

n le

vel

A /

B /

C

Line

eva

luat

ion

(can

be

eval

uate

d by

dat

a or

aud

it/on

site

che

ck)

Che

ck o

f spe

cific

atio

n (fo

r raw

mat

eria

l onl

y)

A: A

pplic

atio

n le

vel

B: B

oard

leve

l C

: Com

pone

nt le

vel

*:

Not

rele

vant

for q

ualif

icat

ion

mat

rix

Risk assessment depending on change for each application.

A - - - -

A - - - -

C - ● ● ●

B - ● ● ●

B - ● ● ●

C - ● ● ●

C - ● ● -

C - ● ● -

B - ● - ●C - ● - ●

C ● ● - -

C ● ● - ●C ● ● - -B ● ● - -B ● ● - -B ● ● - -B ● ● - ●C - - - -

B - - - -

B - - - -

B - - - -

B - - - -

B - - - -

* - - - -

C ● ● - -

C ● ● - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

* - - - -

B - - - -

A - - - -

A - - - -

A - - - -

B - ● ● ●

A - ● ● ●

C - ● ● ●

B - ● - -

B - ● ● ●

B - ● ● -

B - ● ● ●

C - ● ● -

C - ● ● -

C - - ● -


A: If influence on other connections on PCB or laquer expected.

B - ● - -

A - ● - -

B - ● - -

A - ● - -

C - ● - ●

B - ● - -

C - - - -

B ● ● - -

B ● ● - -

C ● ● - -

B ● ● - -B ● ● - ●

B ● ● - -B ● ● - ●C ● ● - ●C - - - -C ● - - -

B - - - -

If data sheet is affected (PAS-IND-DS-01)

B - - - -

B - - - -

B - - - -

B - - - -

* - - - -

C ● - - -

C ● - - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

C - ● - -

* - - - -

B - - - -

A - - - -

A - - - -

A - - - -

C - ● ● -C - ● ● -C - ● ● ●C - ● ● ●

C - ● ● ●

C - ● ● -

C - ● ● -

C - ● ● ●

B - ● - -

B - ● - ●

B - ● - ●C - ● - ●C - ● - ●

C - ● - -

C ● ● - ●C ● ● - C


C ● ● - -C ● ● - -

C ● ● - -

C ● ● - -

B ● ● - ●

C - - - -

B - - - -

B - - - -

B - - - -

B - - - -

B - - - -

* - - - -

C ● ● - -

C ● ● - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

* - - - -B - - - -

A - - - -

A - - - -

A - - - -

C - ● ● ●

B - ● ● -

B - ● ● -

C - ● ● -

C - ● ● -C - ● ● -


A: in combination with PAS-FLM-DS-01 or if change of sealing compound with effect to mechanical properties.

Check if PAS-FLM-DS-01 affected

B: for naked SMD

B: for naked SMD

C - ● ● ●

B - ● - -

B - ● - -

C - ● - -

B - ● - -

C - ● - -

C - ● - -

B - ● - -

C ● ● - ●

C ● ● - -

C ● ● - ●

C - - - -

B - - - -

B - - - -

B - - - -

Check if other PAS-FLM-MA is affected

Check if MATERIAL is affected.

Check if PAS-FLM-DS-01 affected

B: for naked SMD

B - - - -

B - - - -

* - - - -

C ● ● - -

C ● ● - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

* - - - -B - - - -

A - - - -Risk assessment depending on change for each application.

A - - - -

A - - - -

A - ● ● ●

A - ● ● -

B - ● ● -

B - ● ● ●

A - ● ● ●

C - ● ● ●

B - ● ● ●

C - ● ● ●

C - ● ● ●

B - ● ● ●

B - ● ● -

C - - - -

B - ● - ●

B - ● - -

A - ● - ●

B - ● - ●

B - ● - ●

C - ● - -

C - ● - ●

C ● ● - -C ● ● - -

C ● ● - -

C ● ● - -

C ● ● - ●

C ● ● - ●

C ● ● - ●

B ● ● - -

C ● ● - ●C - - - -

B - - - -

B - - - -

B - - - -

B - - - -

B - - - -

* - - - -

C ● - - -

C ● - - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

* - - - -B - - - -

A - - - -

A - - - -

A - - - -

C - ● ● -

C - ● ● -

C - ● ● ●

B - ● ● -

C - ● ● -

C - ● ● ●

C - ● ● -B ● ● -

C - ● ● ●

B - ● - -

B - ● - -


B: only if a cap holder holds the Capacitor body by pressing.

B: in case of external surface of sealing is changed.Evaluation only, if capacitor is gluedB: Only for glued capacitors.

A: Only if impedance increase (delta characterization). Check if datasheet is affected (PAS-ALU-DS-01).A: Only if impedance increase (delta characterization). Check if datasheet is affected (PAS-ALU-DS-01).

B - ● - -

A - ● - -

C - ● - -C - ● - -C - ● - -C - ● - -C - ● - ●

C - ● - ●

C ● ● - -

B ● ● - -

C ● ● - ●

C ● ● - -

C ● ● - -

B ● ● - -

B ● ● - -

C - - - -

B - - - -

B - - - -

B - - - -

B - - - -

A: only for HV application

B - - - -

* - - - -

C ● ● - -

C ● ● - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

C - - - -

* - - - -B - - - -

A - - - -Risk assessment depending on change for each application.

A - - - -

A - - - -

C - ● ● -

C - ● ● -

C - ● ● ●

B - ● ● ●

B - ● ● -

C - ● ● -

B - ● - -

B - ● - -

C - ● - -

B - ● - -

C - ● - -

C - ● - -

A: Risk assessment on application level, if interaction with other material expected.

Risk assessment needed to evaluate compatibility of soldering process.

C - ● - -

C ● ● - -

C ● ● - -

C ● ● - ●

B ● ● - -

C ● ● - ●

B ● ● - ●

C - - - -

B - - - -

B - - - -

B - - - -

B - - - -

B - - - -

* - - - -

C ● - - -

C ● - - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

* - - - -

B - - - -

A - - - -

A - - - -

A - - - -

C - ● ● -

C - ● ● -


C - - ● -

B - ● ● ●

B - ● ● -

C - ● ● -

B - ● - -

B - ● - -

C - ● - -

B - ● - -

C - ● - -

C - ● - -

C - ● - -

C ● ● - -

C ● ● - -

C ● ● - ●

B ● ● - -

C ● ● - ●

B ● ● - ●

C - - - -

B - - - -



B - - - -

B - - - -

B - - - -

B - - - -

* - - - -

C ● - - -

C ● - - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

* - - - -B - - - -

A - - - -

A - - - -

A - - - -

C - ● ● -

C - ● ● -

C - ● ● ●

B - ● ● ●

B - ● ● -

C - ● ● ●

B - ● - -

B - ● - -

C - ● - -

B - ● - -

C - ● - -

C - ● - -




C - ● - -

C - ● - -

C - ● - -

C ● ● - -

C ● ● - ●

C ● ● - ●

B ● ● - ●

C ● ● - ●

B ● ● - ●

C - - - -

B - - - -

B - - - -

B - - - -

B - - - -

B - - - -

* - - - -

C ● ● - -

C ● ● - -

C ● - - -

B ● ● - ●

C ● - - -

C - - - -

- - - -

- - - -


Tem

pera

ture

Cyc

ling

Des

truct

ive

Phy

sica

l Ana

lysi

s

Moi

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e R

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tanc

e

Bia

sed

Hum

idity

Ope

ratio

nal L

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Ext

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l Vis

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Phy

sica

l Dim

ensi

on

Term

inal

Stre

ngth

(Lea

ded)

Res

ista

nce

to S

olve

nts

4 5 6 7 8 9 10 11 12

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● ● ● ● ● - - ● -● ● - - ● - ● - -● ● - ● ● - ● ● -

C C - C C - C - -

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● - ● ● ● ● ● ● -

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● ● ● ● ● ● - ● ●

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● - Y Y ● - - - -

● ● ● ● ● ● ● - ●

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● ● ● - ● ● ● - ●

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● ● Y ● ● ● ● - -

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- - - - - - - - -

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● ● ● - ● - ● - -

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- - - - - - - - -

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- - - - - - - - -

● - ● ● ● ● ● ● -

- - - - - - - - -

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- - - - - - - - -

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Mec

hani

cal S

hock

Vib

ratio

n

Res

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to S

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ring

Hea

t

Ther

mal

Sho

ck

Ele

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stat

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(ES

D)

Sol

dera

bilit

y

Ele

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Flam

mab

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Boa

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13 14 15 16 17 18 19 20 21

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - ● F - B - ●

- - - ● F - B - ●

- ● - ● ● - - ● ●

- - - ● - - - ● -

- - ● ● - ● B - ●

- - ● ● ● - B ● -

- ● ● ● ● ● - ● ●- - - ● - - - ● -

- - - - - - B - -

- - - ● - - B - R- - - - - - B - -- - - - - ● B - -

● - ● - - - B - -

- - - - - - - - -- ● - ● ● - - ● ●- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - ● ● - B - -

- - - ● ● - B - -

- - - - - - B - -

- - ● ● ● - B - ●

- - - - - - B - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - ● - - - ● -

● - - ● - - B ● -

- - ● ● A - B ● -

- ● ● - - ● - - ●

● - - ● - - B ● -

● ● ● ● - ● - - ●

- - - - A - B - ●

- ● ● - - ● B - -

- - - ● - - B - -

- ● ● - - ● B - -

● - - ● ● - B - -

- ● ● - ● ● - - ●

● - - ● - - B - -

● ● - ● - - B - -

- - ● - A - B - -

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- ● ● - - - B - -

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● ● A ● - ● - - -

- - - - - - - - -

● - - ● - - B ● -

- ● - ● - ● - - ●

- - ● - A - B - -

- - - - - - B - -

- - - - - - - - -

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- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

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- - - - - - B - -

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- ● - ● - - - - -- ● - ● - - - - -● ● - ● ● - B - C- - C ● - - B - C

- ● - ● ● - B - -

- - - - - - - - -

- ● ● - - ● B - -

● ● ● ● ● ● B - ●

- ● - - - - - - -

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● ● ● - - - B - ●● ● - ● ● - B - -● - - ● ● - B - -

C - - C C - B,C - -

● - - - - - B - -- - C C C - B,C - C

- - - ● ● - B - -- - ● ● - B - ●

- - ● - ● - B - ●

C - - - C - B,C - -

● ● ● - - ● B - ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- ● - - ● ● B - -

- ● - - ● ● B - -

- - - - - - B - -

● ● ● ● ● ● B ●

- - - - - - - - -

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- - - - - - - - -

● ● - - - - - ● -

● ● - - - ● - ● -

● - ● - - ● B - ●

● ● - - - ● - - -

- - ● - - - ● - -- - - - - - ● - -

- ● ● ● - ● - ● -

● ● - - - - ● - ●

- - - - - ● - - ●

● ● ● - - - ● - ●

- - - - - - - - -

- - - - ● - B - -

- - - - ● - B - -

● ● - - - - - ● -

- - - - - - - - -

- - - - - - B - ●

- - - - ● - B - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - ● ● - B - -

- - - ● ● - B - -

- - - - - - B - -

● ● ● ● ● ● B ● ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● ● - ● - - B - ●

● ● ● ● - - - ● ●

- ● ● - - ● B - ●

● ● ● ● - - B - ●

● ● ● ● - - B - ●

● ● ● ● - - B - ●

● ● ● ● - - B ● ●

● ● ● ● - - B ● ●

- ● ● ● - - B - -

- ● ● ● - - B ● ●

- - ● - - - - - -

- - - - - - - - -

● ● ● ● - - - ● ●

● ● ● - - ● B - ●

● ● ● ● - - B - ●

● ● ● ● - - B ● ●

- ● ● ● - - B - ●

● ● - ● - - B - ●

● ● ● ● - - B - ●

● ● - ● - - B - ●

- ● - ● - - B - -

- ● - ● - - B - ●

● ● - ● - - B - ●

● ● - ● - - B - ●

● ● - ● - - B - ●

● ● - ● - - B ● ●

- - - - - - - - -

● ● - ● - - B - ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - B - -

● ● ● ● - ● B ● ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● ● - - - - - ● -

- ● S - - - - ● -

- - S - - - - ● -

- ● ● - - ● B - ●

- - - - ● - B - -

- - - - ● - B - -

- ● - - - - - - -- ● ● - - - - - -

● ● ● - - ● B ● ●

- ● - - - - - - ●

- - - - - ● - - -

- - - - - - - - -

- ● - - - - - - -

- ● - - ● - B - -- ● - - ● - B - -- - - - ● - B - -

● ● ● - - - B - ●

- ● - - - - - - -

- - - - - - B - -

● ● ● - - - B - ●

- ● - - - B - -

- - - - ● - B - -

- ● - - - - - - -

- - - - - - B - -

- - - - - - - - -

- ● - - - ● - - ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● ● - - ● - B - -

● ● - - ● - B - -

- - - - - - B - -

● ● ● - ● ● B ● ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - ● ● - - - - -

● - ● ● - ● B ● S

- - - - ● - B - -

- - ● ● - - B ● -

● - - - ● ● B - ●

- - ● ● - ● B ● ●

- - - - - - B - ●

- - - - - ● B - ●

● - - - ● ● B - ●

- - - - - - - - -

- - ● ● - - - - ●

- - ● ● - - - - ●

- - ● ● - - - - ●

- - ● ● - - B - ●

- - - ● ● - B - -

● - - - - - B - -

● - - - ● ● B - ●

- - ● ● ● - B - ●

- ● ● - - ● - ● -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - B - -

● ● ● ● ● ● B ● ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - ● ● - - - - -

● - ● ● - ● B ● S

- - - - - - - - -

- - ● ● - - B ● -

● - - - ● ● B - ●

- - ● ● - ● B ● ●

- - - - - - B - ●

- - - - - ● B - ●

● - - - ● ● B - ●

- - - - - - - - -

- - ● ● - - - - ●

- - ● ● - - - - ●

- - ● ● - - - - ●

- - ● ● - - B - ●

- - - ● ● - B - -

● - - - - - B - -

● - - - ● ● B - ●

- - ● ● ● - B - ●

- ● ● - - ● - ● -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - B - -

● ● ● ● ● ● B ● ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - ● ● - - - - -

● - ● ● - ● B ● S

- - - - ● - B - -

- - ● ● - - B ● -

● - - - ● ● B - ●

- ● ● - ● ● B - ●

- - - - - - B - ●

- - - - - ● B - ●

● - - - ● ● B - ●

- - - - - - - - -

- - ● ● - - B - ●

- - ● ● - - B - ●

- ● ● ● - - - - ●

- - - - - - B - -

- - - - ● - B - -

- - ● ● - - B - ●

- - - ● ● - B - -

● - - ● - - B - ●

- ● ● ● - - B - ●

- - ● ● ● - B - ●

- ● ● - - ● - ● -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- ● - - ● - B - -

- ● - - ● - B - -

- - - - - - B - -

● ● ● ● ● ● B - ●

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -


Term

inal

Stre

ngth

(SM

D)

Bea

m L

oad

Test

Flam

e R

etar

danc

e

Rot

atio

n Li

fe

Sur

ge V

olta

ge

Sal

t Spr

ay

Ele

ctric

al T

rans

ient

Con

duct

ion

She

ar S

treng

th

Faul

t Cur

rent

Dur

abili

ty22 23 24 25 27 29 30 31 32

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - R - - - - - -

● - R - - - - - -

● - R - - - - - -

- - R - - N - - -

● - - - - - - - -

- - R - - N - - -

● - R - - - - - -- - R - - N - - -

- - - - - - - - -

R - R - - - - - -- - - - - - - - -- - - - - N - - -

- - - - - N - - -

- - - - - - - - -● - R - - - - - -- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - R - - N - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -- - - - - - - - -- ● - - - - - - -● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● C - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - - - -- - - - - - - - -- C - - - - - - -

- C - - - - - - -

- C - - - - - - -- - - - - - - - -

- C - - - - - - -- C - - - - - - -

- - - - - - - - -

- C - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- C - - - - - - -

- C - - - - - - -

- - - - - - - - -

● C - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - ● -

● - - - - ● - - -

● - - - - ● - - -

- - - - - ● - - -

- - - - - Y - - -

● - - - - ● - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - ● -

● - - - - ● - - -

- - - - - ● - - -

● - - - - ● - - -

- - - - - - - - -

- - - - - - - - -

- - - - - Y - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - Y - - -

- - - - - - - - -

● - - - - - - - -

- - - - - ● - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - ● - - - -

- - - - ● - - - -

- - - - - - - - -- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - ● - - - -- - - - ● - - - -- - - - ● - - - -

● - - - ● - - - -

- - - - - - - - -

- - - - ● - - - -

● - - - - - - - -

- - - - - - - - -

- - - - ● - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - ● - - - -

- - - - ● - - - -

- - - - - - - - -

● - - - ● - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

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- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

● - - - - - - - -

● - - - - - ● - -

● - - - - - - - -

● - - - - - - - -

● - - - - - - - -

- - - - - - - - -

● - - - - - ● - -

● - - - - - ● - -

● - - - - - ● - -

- - - - - - ● - -

- - - - - - ● - -

- - - - - - - - -

- - - - - - ● - -

● - - - - - ● - -

● - - - - - ● - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - ● - - - -

- - - - ● - - - -

- - - - - - - - -

● ● - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -

- - - - - - - - -


End

-of-L

ife M

ode

Ver

ifica

tion

Jum

p S

tart

End

uran

ce

Load

Dum

p E

ndur

ance

Remarks

33 34 35

- - - - -

- - - ● -

- - - - -

additional to AEC-Q200

Whi

sker

Tes

t(IE

C 6

0068

-T2-

82, J

ED

EC

JE

SD

201)

Par

amet

er-A

naly

sis:

C

ompa

rison

of c

urre

nt w

ith c

hang

ed d

evic

ech

arac

teriz

atio

n, e

lect

rical

dis

tribu

tion

- - - - -

- - - - -

- - - - ●

- - - - ●

- - - - -

- - - - -

- - - - ●

- - - - ●

- - - - -- - - - -

- - - - ●

- - - - ●- - - - ●- - - - ●- - - - ●- - - - -- - - - -- - - - -

Check whether AOI at tier 1 can be affected.

Assumption material specification remains unchanged. Otherwise see change of material.

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●

- - - - ● Gage R&R / delta correlation

- - - ● ●

- - - - ●

- - - - -

- - - - -

Test effort depends on final risk assessment.Performance test according to affected process change.

Characterisation depends on impact of production flow.

R (electr. funct.): test coverage.R (reliability) only for change in burn in process.

- - - ● -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - -

- - - ● -

- - - - ●

- - - ● -

- - - - ●

- - - - ●

- - - - ●

- - - - ●

Electrical function affected if mechanical stress distribution changes. AOI, wave soldering and board coating has to be assessed. MSL might change.

Considere in case of core-core glue the air gap.


- - - - ●

- - - ● ●

- - - - ●

- - - - ●

- - - - -

- - - - ●

- - - - ●

- - - - -

- - - ● -

- - - ● - Increase of contact resistance.

- - - - -- - - - -- - - - -- - - - -- - - - ●- - - - -- - - - -

- - - - -

Effect regarding EMC relevant for high frequency only.

Parameter Analysis only for components where mold material has magnetic function

Mechanical damage of wire,impact on solderability in case of stripping process is affecting soldering area.

Influence regarding reliability of solder joint.

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●


- - - ● ●

- - - - ●

- - - - ●

- - - - -

- - - - -




Characterisation depends on impact of final test flow.


- - - ● -

- - - - -

- - - - -

- - - - -

- - - - -- - - - -- - - - -- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - -

- - - - -

- - - - -- - - - -- - - - -

- - - - -

- - - - -- - - - -

Check whether AOI at Tier 1 can be affected


- - - - -- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●


- - - ● ●



- - - - ●

- - - - -

- - - - -- - - ● -

- - - - -

- - - - -

- - - - -

- - - - - Consider vibration in application

- - - - - Consider AOI and processability

- - - ● -

- - - - -

- - - - ●- - - - ●



Change of base material: Consider ESR, high frequency parameter

Consider ESR.Solderability Test for naked SMD components.

- - - - ●

- - - - -

- - - ● -

- - - - -

- - - - -

- - - - ●

- - - - ●

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -


Consider ESR.Solderability Test for naked SMD components.

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●


- - - ● ●

- - - - ●

- - - - -

- - - - -- - - ● -

- - -





- - - - -

- - - - -

- - - - -

- - - - -

- - - - -- - - - -

- - - - -

- - - - -

- - - - -

- - - - - Impedance my be influenced.

- - - - -

- - - - -

- - - - - AOI check necessary!

- - - - -

C0 may be influencedTemperature expansion coefficient may change

X-Ray inspection may be influenced when sealing is containing Pb

Electrical function affected in case of mechanical stress distribution change. AOI, wave soldering and board coating has to be assessed. MSL might be changed.


- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - - AOI check necessary!

- - - - -- - - - -

- - - - -

- - - - -

C0 may be influencedReliabiliy of solder joints may be affected

Electrical function affected in case of mechanical stress distribution change. AOI, wave soldering and board coating has to be assessed. MSL might be changed.

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●


- - - ● ●

- - - - ●

- - - - -

- - - - -- - - ● -





- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - ● -

- - - - ●

- - - - ●

- - - - -- - - - -

- - - - ●

- - - - -- - - ● -

Biased Humidity test can be done without applying voltage.

Test effort depends on final risk assessment.Performance test according to affected material.Assumption material specification remains unchanged. Otherwise see change of material.

- - - - -

- - - - -

- - - - ●- - - - -- - - - ●- - - - -- - - -- - - - ●

- - - - -

- - - - ●- - - - ●

- - - - - R: Depends on process change

- - - - ● R: Depends on process change

- - - - - Solderability may be influenced

- - - - - Solderability may be influenced

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

Terminal Strength (11) not for axial components without paddle tabs.

Terminal Strength (11) and Vibration (14) not for axial components without paddle tabs.

Surge voltage test for high voltage components only.

- - - - -

- - - - -

- - - - ●

- - - - ●


- - - ● ●

- - - - ●

- - - - ●

- - - - -

- - - - -- - - ● -

- - - - -




Characterisation depends on impact of final test flow.


- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●

- - - - ●

- - - - ●

- - - - ●

- - - - ●

- - - - ● SMD components only!

- - - - ●

- - - - -

- - - - -

- - - - -

Parameter analyse only necessary if an anticipated impact on electrical performance.S = SMD device only

Parameter analyse only necessary if an anticipated impact on electrical performance.


- - - - -

- - - - ●

- - - - ●

- - - - ●

- - - - ●

- - - - ●

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●Test effort depends on final risk assessment.Performance test according to affected process change.

- - - - ●


- - - ● ●

- - - - ●

- - - - ●

- - - - -

- - - ● -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●



Characterisation depends on impact of test coverage.R (electr. funct.): test coverage.R (reliability) only for change in burn in process.

Parameter analyse only necessary if an anticipated impact on electrical performance.S = SMD device only

- - - - -

- - - - ●

- - - -

- - - - ●

- - - - ●


- - - - ●

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●

- - - - ●

- - - - ●

- - - - ●

- - - - -

- - - - -

- - - - -

Parameter analyse only necessary if an anticipated impact on electrical performance.


- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●


- - - ● ●

- - - - ●

- - - - ●

- - - - -- - - ● -




Characterisation depends on impact of test coverage.R (electr. funct.): test coverage.R (reliability) only for change in burn in process.

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●

- - - - ●

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- - - - ●

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- - - - ●

- - - - -

- - - - ●

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- - - - ●

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- - - - ●

- - - - ●

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- - - - ●

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - -

- - - - ●

- - - - ●


- - - ● ●

- - - - ●

- - - - -

- - - - -

- - - - -





ID

LED-AN-01

LED-AN-02

y1

LED-DS-01

LED-DS-02

Mark change with an "x"

LED-DS-03

y1

LED-DE-01

LED-DE-02

LED-DE-03

LED-DE-04

LED-DE-05

y1

LED-PW-01

LED-PW-02

LED-PW-03

LED-PW-04

LED-PW-05

LED-PW-13

y1

LED-BD-01

LED-BD-02

LED-BD-03

LED-BD-04

LED-BD-05

y1

LED-PA-01

LED-PA-02

LED-PW-06(former LED-PW-

07)


08)


09)


10)


11)


12)


06)

LED-PA-03

LED-PA-04

LED-PA-05

LED-PA-06

LED-PA-07

LED-PA-08

LED-PA-09

LED-PA-10

LED-PA-16

LED-PA-11(former LED-PW-

15)


11)


12)


13)


14)

LED-PA-17

LED-PA-18

y1

LED-PS-01

LED-PS-02

LED-PS-03

LED-PS-04

y1

LED-EQ-01

LED-EQ-02

LED-EQ-03

y1

LED-TF-01

y1

LED-QG-01





--IP


ABCDEFHJKLMNOPQRSTUVWYZ12

IEC 60810IEC 60810

Type of change

ANY

Any change with impact on agreed upon contractual agreements

DATA SHEET

Correction of data sheet


Any change with impact on processability/manufacturabiliy of customer, which is not covered in the matrix below

Change of datasheet parameters/electrical specification (min./max./typ. values) and/or Pulse/DC specification

Specification of additional parameters

DESIGN

Design changes in routing/layout.

Die shrink

Design of leadframe

PROCESS - WAFER PRODUCTION

New / change of wafer substrate or carrier material

Wafer diameter

New final wafer thickness

Change of electrically active doping/implantation element

Design changes in epitaxy.

LED package (except leadframe)

Change of stacking

New / change of metallization (specifically chip backside)

Process Integrity: Tuning within specification

Change of material supplier with no impact on agreed specifications

Change of specified wafer process sequence (deletion and/or additional process step)

BARE DIE DELIVERIES

New / change of front side metallization

New / change of backside metallization

Change of wafer setup or number of dies on wafer.

New final wafer thickness

Change in die coating or passivation

PROCESS - ASSEMBLY

Change of leadframe/carrier base material

Change of leadframe/carrier finishing material (internal)

New / change of metallization (specifically chip frontside)

Change in process technique (e.g. significant process changes like lithography, etch, oxide deposition, die back surface preparation/backgrind, ...)

Change in die coating or passivaton

New wafer production location or transfer of wafer production to a different not previously released location/site/subcontractor

Change of lead and heat slug plating material/plating thickness (external)

Bump Material / Metall System (internal)

Die attach material

Change of bond wire material

Die Overcoat / Underfill

Change of mold compound/encapsulation/sealing material

Change of conversion material

Change of direct supplier for converter material

Change of converter process technology

Change of product marking

Change in process technique (e.g., die attach, bonding, moulding, plating, trim and form, …)

Process Integrity: Tuning within specification

Change of direct material supplier with no impact on specification

Change in material for sub-components (excluding LED chip & LED package related items) with impact on agreed specifications

PACKING/SHIPPING

Inner Packing/shipping specification change

Outer Packing/shipping specification change

Change of labelling

Dry pack requirement change

EQUIPMENT

Production from a new equipment/tool which uses a different basic technology

Change in final test equipment type that uses a different technology

TEST FLOW

Q-GATE




Change of specified assembly process sequence (additional and/or deletion of process step)

New assembly location or transfer of assembly to a different not previously released location/site/subcontractor

Production from a new equipment/tool which uses the same basic technology (replacement equipment or extension of existing equipment pool) without change of process.

Move of all or part of electrical wafer test and/or final test to a different not previously released location/site/subcontractor

Change of the test coverage/testing process flow used by the supplier to ensure data sheet compliance (e.g. elimination/addition of electrical measurement/test flow block; relaxation/enhancement of monitoring procedure or sampling)


Not required.Information Note required.PCN required.


CONDITIONSNot for Ag plated devices applicable (Ag intended to fail for this test)Only if Bondarea/Wirebond is changed/affectedOnly if dopand/implantation material is changedOnly if Dimensions are changingOnly if min/max Values are changingSequence change onlyNon Epoxy Casted Devices onlyOnly for chip technology using wafer bondingNot for Au plated devicesOnly if Leadframe/Substrate Dimensions are changedOnly if metal composition is changed including sequenceOnly for glued chips Only if process is changingOnly if material properties are changedOnly if glue components are changingOnly if marking technology changesOnly if Floor Life is affectedOnly if Board Reliability is affectedOnly if underfill is affectedOnly for non-hermetic devicesOnly if risk of corrosion is increasingOnly for layer technologyOnly if conversion technology changesOnly if data sheet parameters are affectedOnly if outer dimensions are critical=> Please mark 'NO' with 'x', default is 'YES'

Bearbeitet durch / worked on:

No Yes

P P Not relevant for technical evaluation.

P P

P P

I P


Understanding of LED experts

See processability on board leveltechnical interface means component terminals

Change of application relevant information (e.g. maximum pulse current)Not included: Editorial changes.

Data sheet (editorial changes) has to check if application affectedI: In case of editiorial changesP:In case of impact on product integrity

Changes

rev3 vs. rev2

I P

P P

P P

P P

P P

P P

P P New wafer substrate material.

P P

P P Change in final wafer thickness

P P

Definition of an additional parameter which was not specified before I: if integrity of the device is not affectedP: If there is a risk on supply chain than at least one aditional other change category will apply - LED- DS-02 correction of data sheet

Any device relevant changes in design / layout of epitaxial layersNot included: Changes within design rules and design specification without affecting specified functions, parameters and reliability.

Any change in chip design / layout.Not included: Changes within design rules and design specification without affecting specified functions, parameters and reliability.

Shrink of active area.Not included: sawing street/kerf/scribe line

any change in housing thicknessany change in form or dimensions

any change of leadframe / carrier dimensionsany change of outer dimensions

change of wafer diameter resulting in equipment and process changes

Change in electrically active doping / implantation element resulting in a new technology.

P P change in layer sequence or thickness

P P

P P

-- P

-- P Variation within process specification

-- P

-- P

P P

P P

P P

P P

I P

P P

P P

P P New leadframe/carrier material (new in composition)

P P

Change in metallization of bondpads, material, layer thickness

Change of bottom layer of die (between die and leadframe/carrier). Change in process, material, or dimensions necessary.

Change from wet to dry etching, change from horizontal to vertical oven for oxidation, change from contact litho into stepper litho, …

Change of wafer supplier. Change of supplier for chemicals needed for wafer production.

Any change which is not covered by another type of change. Risk is to be assessed.

Change in material, thickness, and process for coating and passivation

New wafer propduction location or transfer of wafer production with possible additional changes.

Change in bondpads, material, pad pitch, surface changes, layer thicknessChange of bottom layer of die (between die and leadframe/carrier). Change in process, material, or dimensions.

Needed information for pick & place machine.I: only additional number of chipsP: change in spacing between chips and form of wafer

Changes in final Chip height (including carrier); very rare and usually combined with a material change (change of carrier material)Change in material, thickness, and process for coating and passivation

Change of surface material of die attach pad and second bond area (e.g. influence in adhesion to mold compound, wedge bond reliability)

P P

P P Stack die or die to substrate

P P

P P Material, wire diameter, change in process technique

P P

-- P

P P

P P Change of material class.

-- P New supplier with same material specification

I P

I P

P P Any change in assembly process technique

-- P Variation within process specification

-- P

Change in material and process technique for final pin termination (e.g. pure tin). Herein package, processability and reliability on board level can be verified by generic data. Classification depends on impact of change.

Change of die attach material (e.g. soft solder, epoxy, etc). Thermal managment must be respected.

Change of sub-component supplier using different technology/materialsNote: Jump start test at OEMs might be necessary

Supporting layers for complex packages like flip chip.--: No change in product integrityP: change can influence the integrity of final product

Change of mold compound, encapsulation, or sealing material might be affected optical function in case of package related effect (e.g. browning). Component assembly and board coating has to be assessed. MSL might be changed.

new technology for converter productionI: no influence on e/o performance of productP: in case of impact on product integrity

Marking on device.I: change in appearance; readability not affectedP: change of content or change of appearance of data matrix code

Change of suppliers e.g. for lead frames, wire material, die attach, electronical components …

I P

P P

P P dimension change of direct product packing

I P

I P

P P Change of dry pack requirements (change in MSL)

P P

-- P

I P

P P Tester transfer or relocation.

-- P


Addition or deletion of a process step in assembly process sequence with potentially significant impact on the product performanceI: no influence on product integrityP: influence on product integrity expected

New assembly location, assembly transfer or relocation. Transfer of known technology and equipment.

dimension changes indirect product packingI: small changes in dimension or appearanceP: number of reels in the packing are changing

Change of labelling also on reel.I: additional information no change of previous informationP: change in content of previous information



Change of tester platform (e.g. major test program changes , new tester interface, …).I: product specification is not affectedP: product specification is affected

Reduction or additional control steps, test coverage within the process flow



No

am / on:

Examples to explain

*

B

A

e.g.. change of ESD level A

A: A

pplic

atio

n le

vel

B: B

oard

leve

l C

: Com

pone

nt le

vel

* : N

ot re

leva

nt fo

r qua

lific

atio

n m

atrix

Changes

rev3 vs. rev2

I: e.g.: adding new tested parameter C

C

C

Typical shrink of die. A

B

B

C

e.g. 4" to 6" C

e.g. change in final chip/die thickness C

e.g. change from Be to C as dopant C

e.g. change from Double-hetero to Quanten wellse.g. change of barrier thickness

e.g. change in layout of current spreader; thickness of current spreadere.g. reduction of bond pad size

e.g. change of dimensionse.g. change of x, y, or z dimension of the package

e.g. change in leadframe / carrier dimensions in x,y, or z directione.g. change inner design of the leadfeame not affecting the e/o performance & reliability of the device

e.g. different wafer material to currently released material (change from Sapphire to Silicon)

A

e.g. change in bond pad metallization thickness C

e.g. change from Au to Au/Ge C

C

e.g. process control C

e.g. Change of wafer supplier. C

e.g. additional cleaning process in wafer production C

e.g. change from SiO2 to SiN3 C

C

B

e.g. change from Au to Au alloy B

e.g. information change for pick & place machine. B

e.g. change on converter thickness B

e.g. change from SiO2 to SiN3 B

e.g. change from copper alloy to bare copper B

A

e.g. change of isolation layer thickness between n- and p-material

e.g. change from wet etch to dry etche.g. change from laser cutting (sawing) to plasma cutting (sawing)e.g. change from contact litho to stepper litho

e.g. change from Au to Au alloye.g. change in over pad metalization

e.g. change from Ag flash to NiPd protection layere.g. change from Ag spot to Au spot

S47

Weise Sylvia, Quality Management: valid arguments regarding corossion stability , diffusion effects etc.

B

e.g. change to Pb-free material A

e.g. change of Ag glue to Au glue; B

e.g. change from 30µ to 25µ A

A

B

e.g. PPA mold compound A

e.g. change from granats to nitrides C

C

C

e.g. marking of cathode; B

e.g. change die attached from gluing to soldering; B

e.g. process control C

C

e.g. change in heat slug stacke.g. change from Sn into Ni/Pd/Aue.g. change of layer thickness

e.g. using a different ESD-diode in technology and material than previously

P: e.g. change of underfill with change of thermal resistance

e.g. change from volume conversion to layer conversion; e.g. change from stamping to printing of layer

Change of suppliers e.g. for lead frames, wire material, ESD-diode …

S49

Weise Sylvia, Quality Management: valid arguments regarding corossion stability , diffusion effects etc.

e.g. additional or deletion plasma cleaning process C

e.g. Dual source strategy C

e.g. SMT pocket in tape changes B

e.g. pizza box *

B

e.g. change from MSL3 to MSL1 *

B

e.g. change from single site to multi site handler. C

e.g. change in test method from cd to lumen B

Dual source strategy C

C



e.g. change from single wafer to batch process e.g. over pad metalisatione.g. dambar cutting (mechanical to laser cutting)

e.g. test flow block like Final test / final clearance; visual inspection


2016-11-24

MATERIAL PERFORMANCE TEST RESULTS (on the basis of IEC 60810)

Further applicable conditionsIE

C 6

0810

Hig

h Te

mpe

ratu

re O

pera

ting

Life

(HTO

L)

Tem

pera

ture

Cyc

ling

HTO

L

TC

- - - - -

- - - - T

- - - E E

- - - - -

Line

eva

luat

ion

(can

be

eval

uate

d by

dat

a or

aud

it/on

site

che

ck)

Check if LED-DS-01 is affectedProcessability should be assessed.

- - - - -

- ● - ● -

- ● - ● ●

- ● - ● ●

- ● - ● ●

- - ● ● ●

- ● ● ● P

● ● ● ● -

- ● - ● ●

- ● C ● -

A: change from Double hetero to Quanten wells --> spectrum is affected

A: change in layout of current spreader --> radiation pattern changes

Check if LED-DS-02 is affected which leads to a change of the elctrooptic parameters or distributions.



In case other type of changes are affected i.e equipment/process technology - they need to be identified in addition


- - - ● F

- ● M ● ●

- ● M ● ●

- ● - - -

- - - - -

- ● - - -

- - - - -

- ● P ● ●

● ● - ● ●

- - M ● ●

- - M ● ●

- - - - -

- - P ● ●

- ● P ● ●

- ● ● P ●

- ● ● P ●

customer application needs to be checked due to potential sytem voltage differences

A: customer application needs to be checked due to potential sytem voltage differences

B: change from CVD dep to sputter dep for backside/frontside metallization.In case of new equipment please check if LED-PA-14 is also affected.

A or B: Impact on other type of changes described under PROCESS - WAFER PRODUCTION and EQUIPMENT categories of this DeQuMa


Check if LED-DS-01 is also affected.



- - M P ●

- - ● ● ●

- ● ● ● ●

- ● ● ● ●

- - - - -

- ● P ● ●

- ● ● ● -

- ● ● ● Y

- - ● ● P

- ● - ● Y

- - - - O

- ● - - -

- - - - -

- - ● - -




Check if LED-DS-01 is affected for optical/photometric parameters

Check if any change in electro-optical characteristics results in change of data sheet LED-DS-01

A or B: Please check if EQUIPMENT and other type of changes of material (LED-PA-04/05/06/07/08/09/10) are affected

Assumption that change material specification remains unchanged. Otherwise see change of material.

T51

Jung Christian, Quality Management: Comment removed based discussion from 2016-04-07

- - - - -

● ● - - -

- - P - -

- - - - -

- - - - -

- - - - -

- ● - - -

- ● - - -

- ● - - -

● - - B ●

- - - - -

Single case assessment necessary to identify possible interactions or risk.

A or B: Impact on other type of changes described under PROCESS ASSEMBLY and EQUIPMENT



Check if LED-DS-01 is also affected.Corrosion stability should be assessed.


Wet

Hig

h te

mpe

ratu

r Ope

ratin

g Li

fe

Pow

er T

empe

ratu

re C

yclin

g

ES

D C

hara

cter

izat

ion-

Hum

an B

ody

Mod

el

ES

D C

hara

cter

izat

ion-

Mac

hine

Mod

el

Phy

sica

l Dim

ensi

ons

Vib

ratio

n V

aria

ble

Freq

uenc

y

Mec

hani

cal S

hock

Res

ist.

to S

olde

r Hea

t

Sol

dera

bilit

y

Ther

mal

Sho

ck

Hyd

roge

n S

ulph

ide

Pul

se L

ife T

est

Dew

Tes

t

WH

TOL

PTC

ESD

-HB

M

ESD

-MM

PD VVF

MS

RSH

SD TMSK

H2S

PLT

Dew

- - - - - - - - - - - -

- - - - - - - S,T - - - - -

E - E E - - - S - - - E -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

● ● ● ● - - - - - - - ● H

● ● - - - - - ● - B,D,M M ● M

● ● ● ● - - - ● - - - ● -

● ● - - ● ● T - D - D

● ● ● ● ● V V ● T ● - - -

P ● P P - - - ● - P P ● P

● - P P - - - ● - - - ● -

P ● P P - - - - - - - ● -

C C ● ● - - - - - - - ● -

V,L V,L

● ● ● ● - - - - - - - ● F

● ● M,B M,B - - - - - B M ● M

● ● D,M D,M - - - ● - D,M D,M ● D,M

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

● P P P - - - - - - P - P

● - ● ● - - - ● - - - ● -

● ● M,B M,B - - - - - ● ● ● ●

● ● D,M D,M - - - ● - ● ● ● ●

- - - - - - - - - - - - -

P ● P P ● - - ● - - - ● -

● P P P - - - ● - - P - P

● - - - - - - ● ● - A - A

● ● - - - - - ● ● - A - A

K - - - 1 - - ● ● - A - A

● ● - - - - - ● - ● W - W

● ● - - - N N ● - N Q - N

P,D ● - - - D D ● - D P,D ● -

- - - - - - - - - - - - -

P ● - - - - P ● - P P ● -

● ● - - D D D ● T P P P P

● ● - - - Y Y ● - Y P P P

● ● - - - P P ● - P P P P

● ● - - - Y Y ● - Y Z Z Z

- - - - - - - T T - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - P P - - - - T - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - - - - - - - - - - - -

- - ● ● - - - - T - - - -

● B ● ● - - - ● T B - B -

- - - - - - - - - - - - -


Flow

Mix

ed G

as C

oros

ion

Ther

mal

Res

ista

nce

Wire

Bon

d S

treng

th

Wire

Bon

d S

hear

Die

She

ar

Not

es /

Rem

arks

FMG

C

TR WB

S

BS

DS

- - - - - - - -

- - - - - - - -

- E - - - - - E

- - - - - - - -

additional to IEC 60810

- - - - - - - ●

- - - - - - - ●

M - B B D,M - - ●

- ● B B ● - - ●

D L B B D - - ●

- ● B B D - 2 ●

P ● - - ● - - ●

- ● - - - - ●

- ● B B ● - - ●

- ● - - - - - ●

- - - - - - - ●

M - ● ● - - - ●

D,M D,M - - ● - - ●

- - - - - - - -

- - - - - - - _

- - - - - - - -

- - - - - - - -

P - P P - - - ●

- J ● ● ● - - ●

● ● ● ● - - - -

● ● - - ● - - -

- - - - - - - -

- ● B B ● - - ●

P - P P - - - ●

A P,1 ● ● ● - P -

A P,1 ● ● ● - - -

A P,1 - - - - K -

W ● - - ● - - -

Q ● - - ● - - -

P,D - ● ● - - - -

- - - - - - - -

P U - - U - - -

P P - - - - - -

P Y - - - - - ●

P P - - - - - ●

Z Y - - - - - ●

- - - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - - -

- - - - - - - ●

- - B B B - - ●

- - - - - - - ●

Remarks

TR might be considered for complex die bond technologies

Formalism since this is not a product change, ony addtional informationClassification: C



Explanation should be provided in case H2S test is not applicable

Qualification effort depends on type of change.PPAP has to be updated.

customer application needs to be checked due to potential system voltage differences

H2S test should be considered for automotive exterrior applications.explanation should be provided in case H2S test is not applicable

Explanation should be provided in case H2S test is not applicable



See change of material.

Site audit for material change with impact on bondprocess (e.g. from Au to Cu) recommended.






Gage R&R / delta correlation; addtional specification checkB should be considered for Wafer testing

Documents

[XLS] · Web viewExamples to explain Power Temperature Cycling Wire Bond Shear Physical Dimensions Die Shear Change of mold compound/encapsulation/sealing material Vibration Variable