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Idea

Project Proposal Results and Outlook

Dies ist ein Beispiel zum Illustrieren der Möglichkeiten der Kombination von Rahmen

N. Wöhrla, O. Ochedowskib, S. Gottliebc, K. Shibasakid, S. Schulza, V. Bucke

a Faculty of Chemistry, AK Schulz, University of Duisburg-Essen, Germany b Faculty of Physics, AG Schleberger, University of Duisburg-Essen, Germany c Master Student, Nanoengineering, University of Duisburg-Essen, Germany d Institute of Materials Science, University of Tsukuba, Japan e Faculty of Physics, AG Buck, University of Duisburg-Essen, Germany

Plasma-enhanced chemical vapor deposition of graphene on metallic substrates

Paper and Presentation

Synthesis

Characterization 3 Plasma spectroscopy

Li X. et al.; Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science 2009, 324

D. Stojanović, N. Woehrl, and V. Buck, “Synthesis and characterization of graphene films by hot filament chemical vapor deposition,” Phys. Scr. T149, 014068 (2012)

How can graphene be synthesized?

L. G. Cançado et al., “Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies,” Nano Lett. 11(8), 3190–3196 (2011)

Paper: N. Woehrl, O. Ochedowski, S. Gottlieb, K. Shibasaki, S. Schulz “Plasma-enhanced chemical vapor deposition of graphene on copper substrates,” AIP Advances 4(4), 047128 (2014).

appliedGRAPHENE - Synthesis, Characterization and Implemenation of Graphene in Energy Applications

CONSORTIUM OVERVIEW:

Dr. Nicolas Wöhrl / University Duisburg-Essen

Prof. Angelika Heinzel / ZBT Duisburg

Dr. Tilo Drüsedau / PT&B Silcor GmbH

Dr. Diana Lazar / INCDTIM Cluj-Napoca, Romania

Dr. Duncan Fagg / University of Aveiro, Portugal

(submitted Sept. 16th 2014)

DPG Spring Meeting 2014: DY 45.1 „Plasma-enhanced chemical vapor deposition of graphene on copper substrates“

Starting point: Deposition of graphene on copper substrates by thermal CVD (surface catalysis)

Challenges: •  slow: heating up / low pressure •  scaling up: area •  defects and impurities: substrate temperature near melting point of Cu (1085 °C)

Aim:

Can we measure the defect density in the graphene…?

…and correlate it with the process and plasma parameters?

Nano Summer Program June 2 - July 20, 2013

Proof of Concept:

shorter process times by

•  Mono-Layer of Graphene on large area •  BUT: many defects

•  direct plasma heating •  higher process pressure •  dissociation of methane in plasma

Raman spectroscopy:

•  Mean distance between defects as measured by I(D)/I(G) und FWHM(G, D) -> LD = 40 nm

•  uniform over measured area

Defect density vs. process pressure:

Defect density vs. plasma properties:

•  Lower defect density with higher pressure •  Lower defect density with lower gas flow

•  Lower defect density with higher C2/Hα ratio

Results: •  Monolayer graphene on copper and nickel substrates •  still defects (from plasma) •  faster process: plasma heating / dissociation in plasma •  control of defect density by process and plasma

properties

Outlook: •  Influence of Plasma properties

on nucleation and growth of graphene

•  Specific plasma properties for specific substrate materials

Can we improve the synthesis of Graphene by a MW-PECVD process?

growth control by •  correlation of plasma properties

to properties of graphene

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