SD Katalog engl · 3CiS Katalog Strahlungsdetektoren Seite @ CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Stand: 2011 – 03 - 29 Radiation detectors

CATALOGUE Radiation Detectors

CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH

Erfurt, Germany

@ CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Stand: 2011 – 03 - 29

Issued by: CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH The information contained in this product guide corresponds to the facts known up to its publication. Subject to modifications based on technical innovation. All information and calculations have been reviewed conscientiously. Status: 03-2011 CDID: CPI011-2011

CiS Katalog Strahlungsdetektoren Seite


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Radiation detectors

Area of application � detection of high energy particles

� UV, X-Ray, alpha, beta, gamma � high energy physics � medicine � material analysis

Basic Sensitive Elements � pad detectors � micro strip detectors

� pitch ≥ 50 microns � pixel detectors

� minimum size ≥ 50 microns × 150 microns � thinned detector chips 50 ... 200 microns � avalanche diode arrays - under development –

� minimum size ≥ 10 microns × 10 microns � pitch ≥ 20 microns

Basic Wafer Process Features � double side processing

� double sided alignment ≤ ± 1 µm � radiation hardening by defect engineering

� oxygen enriched wafers � implanted pn junctions � one or two metalization layers � different passivation options

� oxid, nitride � parylene or other organic hermetization

-under development- � defect engineering � special dicing capabilities for large or non-orthogonal chips



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Substrates � p-typ and n-typ FZ wafers 1,000 ... 30,000 Ohmcm � p-typ and n-typ CZ resp MCZ wafers ≥ 500 Ohmcm � epitaxial layers

� thickness 20 ... 150 microns � resistivity 50 ... 500 Ohmcm

� silicon wafer thickness ≥ (150) 200 microns

Biasing � punch-through � FOXFET � implanted resistors � poly-silicon resistors

Read out � ac coupled detector structures � dc coupled detector structures

Isolating Features � p-spray • moderated p-spray � p-stop � etched trenches � multi-guard ring

Custom specific Design � p-in-n, n-in-p, n-in-n � wafer � chip � sensor

Characteristics � leakage current ≤ 1 nA / cm² @ 20°C � breakdown voltage 80 ... 500 V

Special Offers � Multi-Chip resp. Multi-Project-Wafer Services (all substrate types)

Reference Applications � Microstrip Detectors: HERA-B, H1-PHI, ATLAS WEDGE, D0,

MEGA, AMS02, STAR/N768, ALICE-S2 � Pixel: ATLAS, CMS, XPAD, PHENIX



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Standard Detector Chips

Pad Diode Chip � active area size 2.5 mm × 2.5 mm � chip size 6.95 mm × 6.95 mm � leakage current ≤ 0.2 nA @ 20°C � p-in-n and n-in-p available � FZ, CZ and epi-layer available � options:

� passivation SiO2 or Si3N4 � chip thickness 285 ... 525 microns

� more detailed parametres on request

pad-diode n-typ NTYPPD21



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Big Pad Diode Chip � active area size 5.00 mm × 5.00 mm � chip size 10.0 mm × 10.0 mm � leakage current ≤ 0.4 nA @ 20°C � p-in-n and n-in-p available � FZ, CZ and epi-layer available � options:

� passivation SiO2 or Si3N4 � chip thickness 285 ... 525 microns

� more detailed parametres on request

pad-diode n-typ NTYPPD11



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AC coupled MicroStrip MiniDetector � chip size 10.0 mm × 10.0 mm � single side detector � n-in-n available � strip isolation by moderated p-spray � strip biasing by implanted resistors and punch through

mini detector n-in-n with p-spray-isolation

� number of strips 100 � strip length 8.0 mm � strip width 18 microns � strip pitch 100 microns

Characteristics � leakage current ≤ 1 nA @ 20°C � breakdown voltage > 300 V



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DC coupled MicroStrip MiniDetector � double sided detector � orthogonal strips � chip size 15.5 mm × 14.3 mm

double sided MicroStrip Detector MDR01

� n-side n-in-n strips � strip number 129 � strip length 14.2 mm � strip width 40 µm � strip pitch 100 µm � pad size 250 microns × 60 microns � strip isolation p-stopp in combination with p-spray � strip biasing FOXFET and punch through

detail MDR01: n-side



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detail MDR01: p-side

� p-side p-in-n strips � number of strips 2 rows of 129 main strips

between 2 main strips 1 inter-strip (balanced charge mode)

� strip length 12.9 mm � strip width 12 µm � strip pitch 27.5 µm # 55 µm (main strips) � pad size 1st row 250 microns × 60 microns

2nd row 250 microns × 34 microns � strip biasing FOXFET and punch through

Pixel - MiniDetektors � single-side detectors

� n-in-p and n-in-n up to 6inch - under development -

Avalange-Diode – MiniDetectora and Detector Arrays � APD small size elements and arrays

- under development -



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Double Sided MicroStrip MiniDetector

Reference Chip Design Examples

� AMS02 DC coupled Detectors � orthogonal strips � balanced strip architecture � strip isolation by moderated p-spray � strip biasing by FOXFET and alternatively by punch-through � 4inch n-typ FZ wafers, 300µm thick, 4 … 6 kOhmcm � chip size after dicing width 72.000 + 0.050 mm

height 41.350 + 0.050 mm

p-side of the detector

� number of strips 2 rows of 642 main strips between 2 main strips 1 inter-strip

(balanced charge mode)

� strip length 39.960 mm � strip width 12 microns � strip pitch 27.5 microns # 55 microns (main strips) � pad size 1st row 250 microns × 60 microns 2nd row 250 microns × 34 microns



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n-side of the detector

� number of strips 384 � strip length 70.640 mm � strip width 40 microns � strip pitch 104 microns � isolated by 3 boron-strips each 8 microns � pad size 250 microns × 60 microns



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ALICE-S2 AC coupled Detectors

� stereo angle 7° � strip isolation by moderated p-spray � metal field plate � strip biasing by punch-through � 4inch n-typ FZ wafers, 285µm thick, 4 … 6 kOhmcm � chip size after dicing width 75.000 + 0.050 mm

height 42.000 + 0.050 mm

p-side of the detector

� number of strips 768 � strip length 40 mm � strip width 40 microns � metal field plate 5 microns � strip pitch 95 microns � dc test pad size 100 microns × 50 microns � ac pad size 200 microns × 60 microns



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n-side of the detector

� strip number 768 � strip length 40 mm � strip width 40 microns � strip pitch 95 microns � dc test pad size 100 microns × 50 microns � ac pad size 200 microns × 60 microns



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Contact Mr. Ralf Röder Product Manager Radiation Detectors Phone: +49-361-663-1461 Mobile: +49-171-5510794 Fax: +49-361-663-1476 email: [email protected]

Address CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Konrad-Zuse-Straße 14 D – 99099 Erfurt Germany Phone: +49-361-663-1410 Fax: +49-361-663-1413 email: [email protected]

Documents

SD Katalog engl · 3CiS Katalog Strahlungsdetektoren Seite @ CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Stand: 2011 – 03 - 29 Radiation detectors