Secondary IonMass Spectrometry

SIMS VII

Proceedings of the Seventh International Conference onSecondary Ion Mass Spectrometry (SIMS VII)

Hyatt Regency Hotel, Monterey, California, USASeptember 3rd-8th, 1989

EditorsA Benninghoven • C A Evans • K D McKeegan • H A Storms •H W Werner

Inv.-NJOHN WILEY & SONS

Fachbereich Materialwissenschaftder Techn. Hochschule Darmstadt

Chichester • New York • Brisbane • Toronto • Singapore

CONTENTS

FUNDAMENTALS

Don E. Harrison, Jr. a retrospective and prospective (invited) 3B. J. Garrison and N. Winograd

keV Particle bombardment of Si: a molecular dynamics simulation(invited) 9

R. Smith, D. E. Harrison, Jr., andB. J. Garrison

Sputtered ion formation (invited) 15P. Williams

Origin of secondary ions emitted from liquids 25P. J. Todd

Compositional transients in the sputtered neutral particle flux 29H. Gnaser and H. Oechsner

Surface bond —length determinations with shadow-cone enhanceddesorption 33

C. Chang and N. Winograd

The influence of megaevent collision sequences on secondary ionization.... 37G. P. Malafsky and N. Winograd

On the use of energy and angular resolved SIMS 41V. T. Cherepin

x Contents

SIMS study of iron carbide formation using negative molecular ions 45C. F. Klein, D. P. Leta, and R. Ayer

Hydrogen SIMS of titanium 49R. Bastasz

Group 13 metal oxide cluster ions, in AlxOy + , GaxOy

+ , and InxOy + 53

F. L. King and M. M. Ross

The ion induced angular distribution patterns of GaAs(llO) andAl/GaAs(110) 57

R. Blumenthal, K. P. Caffey, and N. Winograd

Singly- and doubly-charged secondary ions during bombardment oftitanium and iron alloys with argon and oxygen 61

J. M. Schroeer

Degradation of beam quality in SIMS instruments featuring primary ionretardation in secondary ion extraction fields 65

W. Szymczak and K. Wittmaack

Intensity distribution of singly and multiply charged atomic ions and clusterions sputtered from a clean silicon surface and its dependence upon primaryargon ion energy 69

C. Liangzhan, A. Adnot, and M. Baril

Energy, angular and mass resolved secondary ion emission from silicon 73V. T. Cherepin and A. A. Kosyachkov

SIMS-ISS study of amorphous alloys Fe-B 77S. P. Chenakin, V. T. Cherepin, I. Y. Panichkin,

I. A. Zotov, and K. Rohacek

Energy spectra of Si+ from SiC>2, theory and experiment 81<;- G. Ph. Romanova, A. A. Efremov, and P. I. Didenko

QUANTITATION

A comparison of positive ion relative sensitivity factors for Si andusing Ar + and O2 + ion bombardment 87

S. W. Novak and R. G. Wilson

Relative sensitivity factors for gallium primary ion beam 91H. Satoh, M. Owari, and Y. Nihei

Contents xi

High depth resolution SIMS by deconvolution of the instrumentalbroadening function 95

J. E. Turner, H. Keller, and D. E. Mars

SIMS profile synthesis using delta function dopant distributions 99J. B. Clegg and F. B. Beall

Predicting the best possible outcome of a SIMS depth profile 103D. S. McPhail, M. G. Dowsett, R. A. A. Kubiak,S. M. Newstead, S. Biswas, and S. D. Little-wood

Changes in relative secondary ion yields for dopants in GaAs due tosputter-induced topography changes 107

S. P. Smith

Are relative sensitivity factors transferable among SIMS instruments? I l lD. S. Simons, P. H. Chi, P. M. Kahora, G. E. Lux,

J. L. Moore, S. W. Novak, C. Schwartz,S. A. Schwarz, F. A. Stevie, and R. G. Wilson

Round-robin study of implants in Si and SiO2 by SIMS, RBS, and NAA .... 115P. Roitman, D. S. Simons, P. H. Chi, R. M. Lindstrom,

G. E. Lux, S. Baumann, S. W. Novak, R. G. Wilson,D. Farrington, J. Keenan, F. A. Stevie, J. L. Moore,

R. B. Irwin, A. J. Filo, C. W. Magee, R. Alcorn, and D. File

Ion yield data of impurities in GaAs obtained from round-robin study 119Y. Homma, S. Kurosawa, Y. Kubota, Y. Nakamura, K. Nomura,

M. Shibata, H. Shichi, J. Takahashi, Y. Yoshioka, and T. Ogawa

Reproducibility of the quantitive SIMS analysis of ion-implanted Siwafers 123

G. Lux

Factors that affect reproducibility in SIMS analysis of semiconductors 127P. H. Chi and D. S. Simons

Oxygen and cesium SIMS of rare earth and low electron affinity (<0.2 eV)elements implanted in semiconductors and their electron affinities estimatedfrom SIMS measurements 131

R. G. Wilson

SIMS and SNMS depth profiling of implanted silicon: matrix effects andquantitative analysis 135

R. Canteri, L. Moro, and M. Anderle

xii Contents

Dependence of secondary ion yield on irregularities on the sputtered surfaceof GaAs 139

A. Karen, K. Okuno, F. Soeda, and A. Ishitani

Secondary ion relative sensitivity factors of 49 elements in Si for Oj +

bombardment with negative ion detection and Cs + bombardment withpositive ion detection 143

P. M. Kahora and F. A. Stevie

SIMS depth profiling of ion implant standards in diamond 147S. P. Smith and R. G. Wilson

The role of RBS and nuclear reactions in the production of standards for SIMS 151H. Bakhru

Cs-SIMS quantitative analysis using secondary negative molecular ions forGaAs, InP and related compounds: matrix effects 155

Y. Gao

Relative sensitivity factors and estimated ionization potentials for molecularions in SIMS 159

F. A. Stevie and R. G. Wilson

SIMS quantification on Si(100), GaAs(lOO) and Cdo^Hgo.gTe using Ga andO2 primary beams 163

H. J. Strydom, A. P. Botha, C. A.Strydom, and J. S. Vermaak

COMPLEMENTARY TECHNIQUES

Postionization with electrons, plasma and beams (invited) 169R. Jede

Multiphoton resonant ionization (invited) 179W. H. Christie and J. D. Fassett

Laser microprobe post-ablation ionization (invited) 185R. W. Odom

Nonresonant photoionization of sputtered neutrals (invited) 189C. Becker

Radiocarbon dating with accelerators: methods and applications, includingthe Shroud of Turin (invited) 193

D. J. Donahue, A. J. T. Ml, and T. W. Linick

Contents xiii

Trace analysis of osmium and rhenium by resonance ionization massspectrometry of sputtered atoms 199

J. D. Blum, M. J. Pellin, W. F. Calaway, C. E. Young,D. M. Gruen, I. D. Hutcheon, and G. J. Wasserburg

TOF-SNMS by nonresonant laser-postionization 203G. Kampwerth, M. Terhorst, T. Heller, E. Niehuis, and A. Benninghoven

Surface analysis of bulk organic polymers by single-photon ionization 207J. B. Pallix, U. Schuhle, and C. H. Becker

Laser induced desorption of positive and negative ions of large proteins .... 211/. K. Perera, M. Salehpour, J. Kjellberg, A. Hedin,

P. Hakansson, and B. U. R. Sundqvist

Volatilization of large DNA molecules from a frozen aqueous matrix 215R. W. Nelson and P. Williams

Secondary ion emission from polymer materials under keV-ion and 252-Cf-fission fragment bombardment 219

H. Feld, R. Zurmuhlen, A. Leute, B. Hagenhoff, and A. Benninghoven

Applications of electron beam SNMS to the investigation of changes insputter yield 223

R. Wilson, J. A. van den Berg, and J. C. Vickerman

Detection limits for ambient gas species in sputter depth profiling withelectron gas SNMS 227

R. Jede, K. Seifert, and O. Ganschow

Depth profile measurements of PtxSii_x layers by combined SIMS, SNMS,AESandXPS 231

M. Altebockwinkel, W. Storm, L. Wiedmann, and A. Benninghoven

SIMS and neutron depth profiling studies of S^/SiaN^SiC^/Si structures. 235/. Banerjee, M. R. Frost, P. W. Davies, J. N. Cox, and R. G. Downing

Laterally uniform sputtering in direct bombardment SNMS 239B. J. Hall, H. E. Burriesci, and J. C. Huneke

Doubly-charged matrix argide cluster ions in GDMS spectra 243W. Vieth, J. C. Huneke, and N. McKinnon

Trace oxygen analysis by glow discharge mass spectrometry 247J. C. Huneke, W. Vieth, and N. McKinnon

xiv Contents

Characterization of thin dielectric films using SIMS, RBS, and LIMS 251C. C. Mariner, R. W. Odom, D. W. Martin,

F. R. di Brozolo, and A. J. Braundmeier, Jr.

Use of combined SIMS-XPS techniques for characterization of T^layers obtained by double thermic evaporation 255

M. Cahoreau, S. Michaux, andJ. Caisso

Primary beam damage at the bottom of SIMS craters in GaAs, InP, and Si:a TEM and AES study 259

R. Treichler, H. Cerva, W. Hosier, and R. v. Criegern

Sputter induced resonant ionization spectroscopy for trace analysis in silicon . 263R. Stuck and B. Sipp

Quantitative distribution analysis of oxygen in Czochralski-silicon bycombination of FTIR-spectroscopy, inert gas fusion analysis and secondaryion mass spectrometry 267

S. Gara, G. Stingeder, S. Pahlke, H. Schwenk,E. Guerrero, and M. Grasserbauer

SNMjs and RBS/NRA characterizations of doped oxides for micro-electronic applications 271

L. Moro, P. Lazzeri, G. Ottaviani, P. Serra, and M. Anderle

Glow discharge mass spectrometry with an RF powered atomization/ionization source 275

R. K. Marcus

Injection and detection schemes for accelerator-based SIMS 279S. P. Smith and R. S. Hockett

Reduction of matrix effects in secondary ion mass spectrometry byresonance ionization 283

S. W. Downey and R. S. Hozack

ORGANIC AND BIOLOGICAL ANALYSES

Matrix assisted UV laser desorption of biologically interesting molecules(invited) 289

B. T. Chait and R. C. Beavis

SIMS (Secondary-Ion Mass Spectrometry) in pharmaceutical research(invited) 293

A. Benninghoven, H. Musche, and C. Wunsche

Contents xv

Exact mass determination using TOF-SIMS (invited) 299E. Niehuis

Time-of-flight SIMS analysis of polymers and polymer surfaces(invited) 305

J. Lub and H. van der Wei

TOF-SIMS with a stigmatic ion microscope (invited) 311B. Schueler

SIMS: a method to evaluate the tissue absorbed dose in metabolic radio-therapy; preliminary results with mlBG 315

P. Telenczak, M. Ricard, S. Halpern, and P. Fragu

Deuterium and carbon 14 in biological tissues: detection sensitivity andquantitation by ion microscopy 319

E. Hindie, N. A. Thorne, F. Degreve, and P. Galle

The distribution of aluminum in the forebrain of chronic renal dialysispatients in relation to Alzheimer's disease using SIMS 323

J. M. Candy, A. E. Oakley, S. A. Mountfort, H. E. Bishop,G. A. Taylor, C. M. Morris, andJ. A. Edwardson

High spatial resolution SIMS imaging of labelled human chromosomes 327P. Halle got, C. Girod, M. M. Le Beau, and R. Levi-Setti

Immunocytochemical applications of ion microscopy with digital imaging... 331R. W. Linton, J. J. Lee, J. L. Hunter, and J. D. Shelburne

Origin of the CN~ secondary ions emitted from biological tissue under tenkeV Cs + bombardment 335

E. Hindie, G. Blaise, and P. Galle

Pathological changes in iodine distribution within human thyroid follicle .... 339P. Fragu, C. Briancon, S. Halpern, P. Telenczak,

J. C. Olivo, and E. Kahn

Optimal substrates for SIMS analysis of trace elements in biological tissue.. 343A. E. Oakley, S. A. Mountfort, J. M. Candy,

P. R. Chalker, H. E. Bishop, and J. A. Edwardson

Relative sensitivity factors for elemental microanalysis of cultured cells 347W. A. Ausserer, Y. C. Ling, S. Chandra, and G. H. Morrison

Ion microscopic imaging of intracellular storage and movement of calcium . 351S. Chandra, W. A. Ausserer, and G. H. Morrison

xvi Contents

SIMS depth profiling study of surface enrichment in blends of deuteratedand protonated polystyrene 355

S. A. Schwarz, R. A. L. Jones, E. J. Kramer,M. H. Rafailovich, and J. C. Sokolov

SIMS and copolymer ordering 359V. R. Deline, G. Coulon, T. P. Russell, and D. C. Miller

Depth profiles of mixtures of homopolymers with symmetric, diblockcopolymers 363

V. S. Wakharkar, V. R. Deline, and T. P. Russell

Comparison of TOF-SIMS with laser desorption FT-ICR for identificationof polymer additives 367

B. Asamoto, S. R. Bryan, C. L. Judy, R. W. Linton,B. Hagenhoff, M. Deimal, and A. Benninghoven

SIMS and FAB of biomolecules and pharmaceuticals, a comparison 371B. Hagenhoff, R. Kock, E. Niehuis, A. Benninghoven,

C. Wunsche, and H. Musche

GEOLOGICAL APPLICATIONS

SIMS measurement of oxygen isotope-ratios in meteorites and primitivesolar system matter 377

J. C. Lorin, G. Slodzian, R. Dennebouy, and M. Chaintreau

Isotope abundances of silicates produced in gas-condensation furnace 381C. Uyeda, J. Okano, and A. Tsuchiyama

Isotope ratio imaging of interplanetary dust particles 385R. H. Fleming, G. P. Meeker, F. R. di Brozolo, and D. F. Blake

Precious metal distribution in the Bacubirito iron meteorite by SIMS 389S. L. Chryssoulis and C. G. Weisener

Laboratory simulation of a quadrupolar SIMS analysis performed during aspace mission 393

R. Thomas, M. Bujor, J. C. Lorin, Y. Gao, and R. L. Inglebert

SIMS of polyoxymethylene and questions of cometary grain composition ... 397P. Mahaffy

Imaging SIMS study of "invisible gold" in sulfidic ore concentrates 401S. R. Bryan, J. D. Stephens, J. H. Gibson, and D. R. Rothbard

Contents xvii

Quantitative trace precious metal analysis of sulphide and sulpharsenideminerals by SIMS 405

S. L. Chryssoulis

Determination of optimum voltage offset in the ion microprobe for traceelement analysis of particles 409

J. Gavrilovic

Quantitative SIMS analysis of rare earth elements in mafic-ultramafic rocksamples 413

P. Bottazzi, L. Ottolini, and R. Vannucci

DEPTH PROFILING AND SEMICONDUCTOR APPLICATIONS

Micro-area SIMS depth profiling of dopants in silicon (invited) 419H. Zeininger and R. v. Criegem

Quantitative SIMS analysis of impurities in III-V compound semiconductors(invited) 425

Y. Homma

Depth profiling of buried dielectrics formed by high dose implantation(invited) .• 431

J. A. Kilner

Quantitative applications of SIMS in microelectronics (invited) 437R. G. Wilson, F. A. Stevie, and C. W. Magee

Quantitative study of background signals due to redeposition of sputteredions during on-chip analysis 443

M. Meuris, P. De Bisschop, and W. Vandervorst

Analysis of surface contamination on silicon- and GaAs-wafers by highmass resolution time-of-flight secondary ion mass spectrometry 447

U. Jilrgens, E. Niehuis, and A. Benninghoven

MOVPE regrowth on GalnAsP/InP laser structures for complex OEICs 451P. Harde, F. Fidorra, and H. Venghaus

SIMS quantitative analysis of impurities in hydrogenated amorphous siliconsolar cell 455

Y. Nagajuji, A. Mikami, K. Kuroki, S. Nakano, and Y. Kuwano

Quantitative measurement of the concentration of carbon in silicon bySIMS 459

M. Goldstein and J. Makovsky

xviii Contents

Negative SIMS with oxygen bombardment for the characterization of thinsilicon dioxide films 463

M. R. Frost, P. W. Davies, and I. Banerjee

Applications of AlxGai - xAs stoichiometry measurement by SIMS 4675. A. Schwarz, C. L. Schwartz, J. P. Harbison, and L. T. Florez

High resolution backside SIMS investigation of Ohmic contacts on GaAs ... 471Sj S. A. Schwarz, C. J. Palmstr<j>m, C. L. Schwartz, J. P. Harbison,

T. Sands, W. K. Chan, L. T. Florez, E. D. Marshall, and S. S. Lau

Secondary negative cluster ions for structure analysis-As2~ from Si andCoSi2 475

H. S. Luftman

Gallium beam SIMS depth profiling of dielectrics for the semiconductorindustry 479

/. G. Newman

SIMS investigations of novel high-speed III/V electronic devices 483R. T. Lareau, L. G. Yerk, and R. Khanna

Progress in the "load line calibration* method for quantitative deter-minations of [ O] in silicon by SIMS 487

J. Makovsky, M. Goldstein, and P. Chu

The practical use of polyencapsulation/SIMS for quantitative surfaceanalysis of silicon substrates 491

R. S. Hockett and J. C. Norberg

Evidence of a new beam-induced effect in depth profile analysis of thinfilms of amorphous silicon 495

J. Herion, W. Beyer, and H. Wagner

Electrical conductivity variations in III-V compound layers as determinedby SIMS - applications ?... 499

M. Gauneau, R. Chaplain, A. Rupert, and M. Salvi

A SIMS and LMMS study of Ti incorporation into metal organic chemicalvapor deposition grown InP 503

V. Swaminathan, H. S. Luftman, L. A. Heimbrook,A. G. Dentai, and C. H. Joyner

Study of possible matrix effects in the quantitative determination of oxygenin heavily-doped Czochralski silicon crystals 507

R. J. Bleiler, P. K. Chu, S. W. Novak, and R. G. Wilson

Contents xix

I. C. failure analysis using SIMS combined with electrical measurements ... 511R. Vlaeminck, J. Van Vooren, L. Stevens, and R. Gijbels

Improvement of detection limits of C, O and N in GaP by the backgroundsubtraction method 515

K. Okuno, A. Karen, S. Karen, F. Soeda, and A. Ishitani

Ion microscopy of fluorine-decorated silicon defects 519R. Brigham and R. S. Hockett

Depth profiling of channeled arsenic implants 523P. A. Ronsheim, W. Rausch, and R. F. Lever

SIMS analysis of contamination elements in the oxide layer on VLSI siliconwafer 527

N. Fujino, H. Horie, K. Hiramoto, Y. Tanizoe, S. Sumita,and T. Shiraiwa

Depth profiling of Si in AlGaAs/GaAs heterostructures with SIMS 531M. Maier

Application of SIMS to the evaluation of crystal quality and electricalbehavior of GaAs heteroepitaxy grown on silicon 535

J. J. Murray, S. Nozaki, T. George, A. T. Wu, and P. W. Davies

SIMS depth profiling of AlGaAs/GaAs self-aligned thin emitter hetero-junction bipolar transistor (SATE HBT) 539

L. C. Hopkins and R. J. Malik

Complete characterization of IH-V optoelectronic devices using cesiumbombardment SIMS ? 543

C. W. Magee

Checking the inhomogeneity of matrix element depth distribution in anInGaAsP-layer with SIMS 547

K. Miethe, E. Kuphal, and A. Pocker

Shallow range distributions of ' 'B + in CoSi2 551B. Mohadjeri and B. G. Svensson

SIMS characterisation of ZnS thin films for direct-current electro-luminescence 555

G.W. Blackmore and J'. M. Blackmore

SIMS imaging of laser induced selected area epitaxy of CdTe 559G. W. Blackmore, S. J. C. Irvine, H. Hill, and M. R. Houlton

xx Contents

SIMS study of the redistribution of ion-implanted aluminum in silicon 563O. Ishiwata, M. Watanabe, F. Kirihata, and M. Nagano

SIMS study of implanted Be out-diffusion in heteroepitaxial GaAs/AlGaAsduring annealing 567

B. Molnar and S. M. Hues

SIMS and photoluminenscence studies of rare earth implants in InP 571J. 5. Solomon, G. S. Pomrenke, R. L. Hengehold, and Y. K. Yeo

In-situ SIMS study of boron contamination of silicon oxide layers 575J. L. Glasper, D. J. Robbins, I. M. Young, and P. J. Sutcliffe

SIMS analysis of ion implantation profiles of BF2 in photoresist 579F. A. Stevie, R. D. Huttemann, W. R. Knolle, andJ. L. Moore

Gaseous impurity rapid aggregations at lattice imperfections in silicon fromambient 583

T. ho and T. Abe

Energy dependence of the in-depth resolution for matrix ions inSi16O2/Si18O2 system 587

G. Prudon, J. C. Dupuy, P. Pinard, and S. Rigo Cy

Quantification of surface contamination on silicon wafers using poly-encapsulation SIMS 591

S. Biswas, R. Falster, I. E. Kelly, and S. D. Littlewood

The segregation of impurities in buried oxide layers 595S. Biswas, J. A. Kilner, K. J. Reeson, and S. Biswas

SIMS depth profiling through multilayer semiconductor materials 599T. Tanigaki, Y. Kato, and T. Suzuki

Secondary ion mass spectrometry analysis of dopant diffusion out of cobaltsilicide ' 603

S. E. Shore, D. D. Sieloff, R. O. Frenette, T. D. Sullivan, and P. Geiss

SIMS for accurate process monitoring in CoSi2-on-Si MOSFET technology 607H. E. Smith and J. L. Beagle

Depth profiling of metals, alkalis and chlorine in SiO2/Si structures with aCAMECAIMS4F 611

P. Maillot and A. E. Morgan

Contents xxi

The redistribution of arsenic and germanium in the altered layer formedduring SIMS analysis of silicon 615

M. G. Dowsett, C. Jeynes, E. A. Clark, R. Webb, and S. M. Newstead

Field induced impurity migration during SIMS depth profiling 619C. J. Vriezema, K. T. F. Janssen, G. M. Fontijn, and P. C. Zalm

On the mass and energy dependence of depth resolution 623M. Meuris, P. De Bisschop, W. Vandervorst,

J. A. Jackman, and T. E. Jackman

High precision depth profiling of implanted semiconductors 627E. A. Clark, M. G. Dowsett, H. S. Fox, and S. M. Newstead

Quasi-static SIMS on bevelled semiconductor heterostructures 631G. Horcher, A. Forchel, S. Bayer, H. Nickel, W. Schlapp, and R. Losch

SIMS depth profiling of implanted silicide/silicon layers 635R. Canteri, R. Angelucci, and M. Anderle

Image processing method for calibration of ion beam scanning to optimizesputter crater in SIMS 639

G. Bilger and J. E. Fischer

Temperature dependent Gibbsian segregation of Cu in Si during SIMSdepth profiling 643

5. F. Corcoran, S. K. Hofmeister, D. P. Griffis, and R. W. Linton

Some new characterization results of Si3N4 films on GaAs for ICtechnology 647

C. Grattepain and A. M. Huber

High resolution, high sensitivity SIMS dopant mapping in semiconductordevices 651

G. D. T. Spiller, P. J. Skevington, D. M. Rohlfing, and M. J. Robertson

Self charge compensation during depth profiling of electromigrating ^impurities in insulating films , 655

S. Nagayama, S. Makinouchi, A. Takano, M. Tezuka,K. Takahashi, and M. Kudo

SIMS depth profile analysis of BPSG and silicon nitride without chargecompensation using the SI-SIMS technique 659

G. R. Mount

xxii Contents

Interface studies of InGaAs/InP multiple quantum well structures usingelectron gas SNMS 663

U. Breuer and H. Kurz

Two dimensional analysis of semiconductors at dopant sensitivity usingSIMS 667

G. Cooke, M. G. Dowsett, C. Hill, E. A. Clark,P. Pearson, /. Snowden, and B. Lewis

Effect of primary ion beam focus on crater shape and depth resolution inSIMS 671

S. J. Pachuta and J. A. Pecore

The few fjxn area analysis under alternating O2"1" and C s + ion beambombardment 675

T. Hoshi

Ion beam mixing and sample effects on SIMS and SNMS depth resolutionof SiCySi and compound semiconductor interfaces 679

S. W. MacLaren, J. E. Baker, L. J. Guido, N. Holonyak, Jr.,M. Anderle, and C. M. Loxton

Charge-compensated Cs SIMS applied to semiconductor/dielectric hetero-structures h 683

R. G. Wilson and C. J. Hitzman

SIMSofH:LiNbO3 687R. G. Wilson, S. W. Novak, J. M. Zavada, A. Loni, and R. M. De La Rue

HIGH TEMPERATURE SUPERCONDUCTOR APPLICATIONS

High resolution SIMS imaging of multilayer-deposited high Tc thin films... 693R. Levi-Setti, J. M. Chabala, R. P. H. Chang, D. L. Hansley,

J. B. Ketterson, D. Q. Li, Y. L. Wang, and X. K. Wang

SIMS analysis of oxygen and carbon in YBa2Cu3O7_x superconductors 697G. Gillen, P. Chi, and D. S. Simons

SIMS-ISS study of the high-Tc superconductor 701S. P. Chenakin, V. T. Cherepin, I. Yu. Panichkin, and I. A. Zotov

Quantitative SIMS of superconducting oxide systems 705E. U. Engstrbm, A. R. E. Lodding, and O. Odawara

Contents xxiii

METALLURGICAL APPLICATIONS

Metallurgical applications of SIMS analysis on steels 711D. Loison

Detection of grain-boundary segregation in steels by SIMS 715J. A. Jackman, M. T. Shehata, J. T. Bowker, L. E. Collins,

and T. F. Malis

Oxygen diffusion during the oxidation of Ni3Al alloys 719A. M. Venezia, J. E. Baker, and C. M. Loxton

Deuterium in-depth analyses.of oxidized Zr-2.5% Nb pressure tube samplesremoved from an operating nuclear reactor 723

A. M. Brennenstuhl, B. D. Warr, N. S. Mclntyre, C. G. Weisener,and R. D. Davidson

Analysis of nitrogen-pulsed sputtered beryllium 727C. W. Price and J. C. Norberg

Studies on the niobium-deuterium system using SIMS 731H. Zuchner and T. Bruning

Studies on the vanadium-deuterium system using SIMS 735H. Zuchner and P. Kock

SIMS study of corrosion of Co-Cr sputtered thin films 739Y. Hayashi, T. Nagata and H. Hagi

Application of SIMS to the quantitative analysis of TiB, TiC wearprotecting coatings 743

G. Brault, G. Farges, G. Rautureau, M. Spirckel, andJ. C. Pivin

SIMS analysis of carbon reinforced aluminum composites 747L. Dignard-Bailey and J. A. Jackman

SIMS studies of model silver halide emulsion microcrystals of practical size 751J. M. Chabala, C. J. Falder, R. Levi-Setti, and T. J. Maternaghan ,

STATIC SIMS AND THE ANALYSIS OF POLYMERS

Secondary ion formation from polymer materials: a systematic investigation 757D. van Leyen, M. Deimel, B. Hagenhoff, and A. Benninghoven

xxiv Contents

Quantitation of organic molecular ions in static secondary ion massspectrometry: can it be done? 761

P. A. Cornelio, M. B. Clark, Jr., andJ. A. Gardella, Jr.

TOF-SIMS of model polyether polyurethanes 765/. V. Bletsos, D. M. Hercules, J. N. Rieck, C. G. Karakatsanis,

D. van Leyen, and A. Benninghoven

Static SIMS characterization of a styrene/p-hydroxystyrene copolymerseries 769

A. Chilkoti, D. G. Castner, and B. D. Ratner, and D. Briggs

Surface characterization of polycarbonate/polybutylene terephthalate blendsby static secondary ion mass spectrometry 773

R. S. Michael, W. Katz, J. Newman, and J. Moulder

Static SIMS analysis of polymer surfaces with a double focusing massspectrometer 777

S. Seki, Y. Ikebe, H. Iwamoto, and H. Tamura

Static SIMS investigations of organic-metallic surface reactions 781B. Wenclawiak and T. J. Prater

Absolute coverage measurements of silicon hydrides on Si surfaces usingstatic SIMS 785

S. M. Gates and C. M. Greenlief

SSIMS studies on 18O2 plasma treated polypropylene 789E. Occhiello, M. Morra, F. Garbassi, P. Humphrey, and J. C. Vickerman

Surface characterisation of oxides by static SIMS 793N. M. Reed and J. C. Vickerman

Static secondary ion mass spectrometry and contact angle measurements onderivatized glass surfaces 797

G. Barth, R. Linder, and L. Barnard

Application of neutral-beam SIMS to the study of polycation adsorption onkaolin 801

B. L. Bentz, J. K Lampert, and L. J. Morgan

What are the limits of detection for molecules on surfaces using ion beaminduced desorption? 805

,D. M. Hrubowchak, M. H. Ervin, and N. Winograd

Contents xxv

Charge compensation of insulators in SSIMS analysis 809N. M. Reed, P. Humphrey, and J. C. Vickerman

INSTRUMENTATION

SIMS at high sensitivity and high mass resolution (invited) 815S. W. J. Clement and W. Compston

Liquid metal ion microprobe studies using parallel ion detection (invited)... 821Y. Nihei, H. Satoh, and M. Owari

Extreme energy filtering for the elimination of cluster interferences in SIMS 827S. N. Schauer and P. Williams

The IMS 1270 - a new high transmission SIMS 831C. Conty, B. Rasser, and H. N. Migeon

Design for an improved quadrupole-based SIMS spectrometer with hightransmission and a large acceptance area 835

B. F. Phillips

Exploiting the versatility of quadrupole SIMS instrumentation 839S. P. Thompson, D. F. Reich, and G. Peterson

Development of a hollow cathode glow discharge ion source for the CamecaIMS 3f secondary ion mass spectrometer 843

R. Deng and P. Williams

Ultra low dose static SIMS with TOF analysis and a pulsed fast source 847S. J. Mullock, D. F. Reich, and T. Dingle

A new time-of-flight secondary ion microscope 851B. Schueler, P. Sander, and D. A. Reed

Improved speed and quality of analysis in SIMS depth profiling using a dual,beam ion micro-probe

H. Frenzel

SIMS as an end-point detector in micro-machining with focused ion beams . 859M. J. Vasile and L. R. Harriott

Image current detection in quantitative microprobe Fourier transform ioncyclotron resonance spectrometry 863

J. T. Brenna and W. R. Creasy

xxvi Contents

Expert system development in quantitative SIMS analysis 867Y. Ling

Improvement of measurements at high mass resolving power in magneticsector SIMS instruments by means of an electrostatic peak switching unit... 871

/ . Van Vooren, R. Vlaeminck, J. Vandenbroeck, and R. Gijbels

Sampling a glow discharge atomization/ionization source with a doublequadrupole mass spectrometer 875

R. K. Marcus

A vacuum of 5 x 10~10 Torr in the Cameca IMS4F sample chamber 879H. N. Migeon, M. Schuhmacher, and B. Rasser

Compact Cs + ion microsource 883H. Liebl, B. Senftinger, P. Staib, and H. Weiss

Computer aided peak identification in high resolution mass spectrometry ofsolid materials 887

N. A. Thome and F. Degreve

SIMS analysis of insulating materials using EBIC 891Y. Ikebe, H. Iwamoto, H. Toita, and H. Tamura

Development of a scanning SCANIIR microsocope 895M. Inoue, S. Kunitomo, T. Tsutsui, S. Nishigaki, T. Noda, and J. Okano

Factor affecting trace determinations of hydrogen by secondary ion massspectrometry 899

L. A. Streit and C. Bowers

Development of new field limiting method for SIMS 903H. Tamura, Y. Ikebe, H. Toita, H. Hirose, and H. Shichi

Development of an instrument for semiconductor analysis using laser-induced resonant post-ionization of sputtered neutrals 907

P. De Bisschop, D. Huyskens, M. Meuris, W. Vandervorst,B. Rasser, and F. Costa de Beauregard

ToFSIMS-QuadSIMS. An assessment of their relative advantages forapplied surface analysis by static SIMS 911

D. Johnson, A. J. Paul, P. Humphrey, N. M. Reed, andJ. C. Vickerman

Contents xxvii

ION IMAGING

Quantitative digital imaging study of boron diffusion in CVD SiC films 917J. H. Gibson, S. K. Lau, and S. R. Bryan

Detectors and detector discriminations in ion microscopy 921D. S. Mantus, L. K. Turner, Y. -C. Ling, and G. H. Morrison

Ion-to-optical images registration: a tool for correcting distortions in ionmicroscopy images 925

J. C. Olivo, E. Kahn, S. Halpern, P. Fragu, and R. Di Paola

Concentration histogram images: a digital imaging method for analysis ofSIMS compositional maps 929

D. E. Newbury and D. S. Bright

Analyses of particles in beryllium by ion imaging 935C. W. Price and J. C. Norberg

Recent developments of the IMS 4F imaging capabilities 939M. Schuhmacher, H. N. Migeon, and B. Rasser

Molecular microanalysis by application of pattern recognition to SIMSimages 943

R. W. Linton, C. U. Ro, D. C. Wilson, J. L. Hunter, and S. F. Corcoran

Optimization of acquisition parameters for ion microscopy/digital imagingusing a CCD detector 947

J. L. Hunter, Jr., D. P. Griffis, and R. W. Linton

SIMS imaging applications and hydrogen detection limits on few micro-meters square patterns 951

M. Outrequin, J. Marien, P. Gelin, and M. Perdereau

List of contributors 955

Index of reviewers 961

Index of session chairpersons 963